FQPF8N80C MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FQPF8N80C
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 59 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 V
   Qgⓘ - Carga de la puerta: 35 nC
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.55 Ohm
   Paquete / Cubierta: TO220F

Búsqueda de reemplazo de MOSFET FQPF8N80C

FQPF8N80C Datasheet (PDF)

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fqp8n80c fqpf8n80c fqpf8n80cydtu.pdf

January 2009TMQFETFQP8N80C/FQPF8N80C/FQPF8N80CYDTU800V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 8A, 800V, RDS(on) = 1.55 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 35 nC)planar stripe, DMOS technology. Low Crss ( typical 13 pF)This advanced technology has

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December 2013FQP8N80C / FQPF8N80C / FQPF8N80CYDTUN-Channel QFET MOSFET800 V, 8.0 A, 1.55 Description FeaturesThis N-Channel enhancement mode power MOSFET is 8.0 A, 800 V, RDS(on) = 1.55 (Max.) @ VGS = 10 V,produced using Fairchild Semiconductors proprietary planar ID = 4.0 Astripe and DMOS technology. This advanced MOSFET Low Gate Charge (Typ. 35 nC)tec

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QFETFQP8N90C/FQPF8N90C900V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 6.3A, 900V, RDS(on) = 1.9 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 35 nC)planar stripe, DMOS technology. Low Crss ( typical 12 pF)This advanced technology has been especially tailored to

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QFETFQP8N60C/FQPF8N60C600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7.5A, 600V, RDS(on) = 1.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 28 nC)planar stripe, DMOS technology. Low Crss ( typical 12 pF)This advanced technology has been especially tailored to

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February 2006TMFRFETFQPF8N60CF600V N-Channel MOSFETFeatures Description 6.26A, 600V, RDS(on) = 1.5 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 28 nC) transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Crss ( typical 12 pF)This advanced technology has been especially tailored t

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Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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