All MOSFET. FQPF8N80C Datasheet

 

FQPF8N80C Datasheet and Replacement


   Type Designator: FQPF8N80C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 59 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 35 nC
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.55 Ohm
   Package: TO220F
 

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FQPF8N80C Datasheet (PDF)

 ..1. Size:1280K  fairchild semi
 fqp8n80c fqpf8n80c fqpf8n80cydtu.pdf pdf_icon

FQPF8N80C

January 2009TMQFETFQP8N80C/FQPF8N80C/FQPF8N80CYDTU800V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 8A, 800V, RDS(on) = 1.55 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 35 nC)planar stripe, DMOS technology. Low Crss ( typical 13 pF)This advanced technology has

 ..2. Size:1146K  onsemi
 fqp8n80c fqpf8n80c fqpf8n80cydtu.pdf pdf_icon

FQPF8N80C

December 2013FQP8N80C / FQPF8N80C / FQPF8N80CYDTUN-Channel QFET MOSFET800 V, 8.0 A, 1.55 Description FeaturesThis N-Channel enhancement mode power MOSFET is 8.0 A, 800 V, RDS(on) = 1.55 (Max.) @ VGS = 10 V,produced using Fairchild Semiconductors proprietary planar ID = 4.0 Astripe and DMOS technology. This advanced MOSFET Low Gate Charge (Typ. 35 nC)tec

 0.1. Size:1252K  fairchild semi
 fqpf8n80cydtu.pdf pdf_icon

FQPF8N80C

January 2009TMQFETFQP8N80C/FQPF8N80C/FQPF8N80CYDTU800V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 8A, 800V, RDS(on) = 1.55 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 35 nC)planar stripe, DMOS technology. Low Crss ( typical 13 pF)This advanced technology has

 8.1. Size:865K  fairchild semi
 fqp8n90c fqpf8n90c.pdf pdf_icon

FQPF8N80C

QFETFQP8N90C/FQPF8N90C900V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 6.3A, 900V, RDS(on) = 1.9 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 35 nC)planar stripe, DMOS technology. Low Crss ( typical 12 pF)This advanced technology has been especially tailored to

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Datasheet: FQPF7N80C , FDD16AN08F085 , FQPF7P20 , FQPF85N06 , FQPF8N60C , FDD24AN06LF085 , FQPF8N60CF , FDMS7680 , SKD502T , FQD5N15 , FQPF8N90C , FQPF9N25C , FQPF9N50CF , FQPF9N90C , FQPF9P25 , FQS4900 , FCI25N60N .

Keywords - FQPF8N80C MOSFET datasheet

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