FQPF9N50CF Todos los transistores

 

FQPF9N50CF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQPF9N50CF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 44 W

Tensión drenaje-fuente (Vds): 500 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 9 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Carga de compuerta (Qg): 28 nC

Resistencia drenaje-fuente RDS(on): 0.85 Ohm

Empaquetado / Estuche: TO220F

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FQPF9N50CF Datasheet (PDF)

1.1. fqp9n50c fqpf9n50c.pdf Size:845K _fairchild_semi

FQPF9N50CF
FQPF9N50CF

TM QFET FQP9N50C/FQPF9N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 9 A, 500V, RDS(on) = 0.8 ? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 28 nC) planar stripe, DMOS technology. Low Crss ( typical 24 pF) This advanced technology has been especially tailored to Fast swit

1.2. fqpf9n50ct fqpf9n50cydtu.pdf Size:844K _fairchild_semi

FQPF9N50CF
FQPF9N50CF

TM QFET FQP9N50C/FQPF9N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 9 A, 500V, RDS(on) = 0.8 Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 28 nC) planar stripe, DMOS technology. • Low Crss ( typical 24 pF) This advanced technology has been especially tailored to

 1.3. fqpf9n50c.pdf Size:770K _fairchild_semi

FQPF9N50CF
FQPF9N50CF

November 2013 FQPF9N50C N-Channel QFET® MOSFET 500 V, 9 A, 800 mΩ Description Features These N-Channel enhancement mode power field effect 9 A, 500 V, RDS(on) = 800 mΩ (Max.) @ VGS = 10 V, • transistors are produced using Fairchild s proprietary, ID = 4.5 A planar stripe, DMOS technology. This advanced • Low Gate Charge (Typ. 28 nC) technology has been especially tailored to m

1.4. fqpf9n50cf.pdf Size:765K _fairchild_semi

FQPF9N50CF
FQPF9N50CF

December 2005 TM FRFET FQPF9N50CF 500V N-Channel MOSFET Features Description 9A, 500V, RDS(on) = 0.85? @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchilds proprietary, planar stripe, Low gate charge (typical 28 nC) DMOS technology. Low Crss (typical 24pF) This advanced technology has been especially tailored to mini- Fast

Otros transistores... FQPF8N60C , FDD24AN06L_F085 , FQPF8N60CF , FDMS7680 , FQPF8N80C , FQD5N15 , FQPF8N90C , FQPF9N25C , IRF9540N , FQPF9N90C , FQPF9P25 , FQS4900 , FCI25N60N , FQS4901 , FCP25N60N , FQS4903 , FQT13N06 .

 

 
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