FQPF9N50CF PDF and Equivalents Search

 

FQPF9N50CF Specs and Replacement

Type Designator: FQPF9N50CF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 44 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm

Package: TO220F

FQPF9N50CF substitution

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FQPF9N50CF datasheet

 ..1. Size:765K  fairchild semi
fqpf9n50cf.pdf pdf_icon

FQPF9N50CF

December 2005 TM FRFET FQPF9N50CF 500V N-Channel MOSFET Features Description 9A, 500V, RDS(on) = 0.85 @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge (typical 28 nC) DMOS technology. Low Crss (typical 24pF) This advanced technology has been especially tailored to ... See More ⇒

 ..2. Size:1297K  onsemi
fqpf9n50cf.pdf pdf_icon

FQPF9N50CF

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 5.1. Size:844K  fairchild semi
fqpf9n50ct fqpf9n50cydtu.pdf pdf_icon

FQPF9N50CF

TM QFET FQP9N50C/FQPF9N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 9 A, 500V, RDS(on) = 0.8 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 28 nC) planar stripe, DMOS technology. Low Crss ( typical 24 pF) This advanced technology has been especially tailored to... See More ⇒

 5.2. Size:845K  fairchild semi
fqp9n50c fqpf9n50c.pdf pdf_icon

FQPF9N50CF

TM QFET FQP9N50C/FQPF9N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 9 A, 500V, RDS(on) = 0.8 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 28 nC) planar stripe, DMOS technology. Low Crss ( typical 24 pF) This advanced technology has been especially tailored to... See More ⇒

Detailed specifications: FQPF8N60C , FDD24AN06LF085 , FQPF8N60CF , FDMS7680 , FQPF8N80C , FQD5N15 , FQPF8N90C , FQPF9N25C , IRF1405 , FQPF9N90C , FQPF9P25 , FQS4900 , FCI25N60N , FQS4901 , FCP25N60N , FQS4903 , FQT13N06 .

Keywords - FQPF9N50CF MOSFET specs

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