DH100P18D MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DH100P18D
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 63 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 13 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 27.3 nS
Cossⓘ - Capacitancia de salida: 60 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.185 Ohm
Encapsulados: TO252
Búsqueda de reemplazo de DH100P18D MOSFET
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DH100P18D datasheet
..1. Size:1048K cn wxdh
dh100p18 dh100p18f dh100p18i dh100p18e dh100p18b dh100p18d.pdf 
DH100P18DH100P18F/DH100P18I DH100P18E/DH100P18B/DH100P18D 13A 100V P-channel Enhancement Mode Power MOSFET 1 Description These P-channel enhancement mode power mosfets used V =-100V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS R = 165m DS(on) (TYP) standard. I = -13A D 2 Features Low on resistance Low
6.1. Size:537K cn wxdh
dh100p18v.pdf
DH100P18V -6A -100V P-channel Enhancement Mode Power MOSFET 1 Description These P-channel enhancement mode power mosfets used V =-100V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS R = 160m DS(on) (TYP) standard. I = -6A D 2 Features Low on resistance Low gate charge Fast switching Low reverse
8.1. Size:1193K china
dh100p30.pdf
DH100P30/DH100P30F/DH100P30I/ DH100P30E/DH100P30B/DH100P30D 30A 100V P-channel Enhancement Mode Power MOSFET 1 Description These P-channel Enhanced VDMOSFETs, Used V -100V DSS = advanced trench technology and design, provide to excellent R with low gate charge. Which accords R DSON DS(on) TYP) =35m with the RoHS standard. I = -30A D 2 Features Fast Switching Low ON
8.3. Size:1100K cn wxdh
dh100p30a dh100p30af dh100p30ai dh100p30ae dh100p30ab dh100p30ad.pdf
DH100P30A/DH100P30AF/DH100P30AI DH100P30AE/DH100P30AB/DH100P30AD 30A 100V P-channel Enhancement Mode Power MOSFET 1 Description These P-channel enhancement mode power mosfets used 2 D advanced trench technology design, provided excellent V = -100V DSS Rdson and low gate charge. Which accords with the RoHS G R = 47m DS(on) (TYP) standard. 1 3 S ID =-30A 2 Features Low on r
8.4. Size:1020K cn wxdh
dh100p40 dh100p40f dh100p40i dh100p40e.pdf
DH100P40/DH100P40F/ DH100P40I/DH100P40E 40A 100V P-channel Enhancement Mode Power MOSFET 1 Description These P-channel Enhanced VDMOSFETs, Used VDSS = -100V advanced trench technology and design, provide to excellent Rdson with low gate charge. Which accords RDS =31m (on) (TYP) with the RoHS standard. ID = -40A 2 Features Fast Switching Low ON Resistance Low Gate Ch
8.5. Size:1238K cn wxdh
dh100p30d.pdf
DH100P30D -100V/33m /-35A P-MOSFET Features Key Parameters VDS Low on resistance -100V RDS(on)typ. Low reverse transfer capacitances 33m ID 100% single pulse avalanche energy test -35A Ciss@10V 100% VDS test 5250pF Pb-Free plating / Halogen-Free / RoHS compliant Qgd 19nC Applications Load switch TO-252 Marking & Packing Information Part # Package
8.6. Size:1002K cn wxdh
dh100p25 dh100p25f dh100p25i dh100p25e dh100p25b dh100p25d.pdf
DH100P25/DH100P25F/DH100P25I/ DH100P25E/DH100P25B/DH100P25D 25A 100V P-channel Enhancement Mode Power MOSFET 1 Description These P-channel Enhanced VDMOSFETs, Used V -100V DSS = advanced trench technology and design, provide to excellent R with low gate charge. Which accords R DSON DS(on) TYP) =72m with the RoHS standard. I = -25A D 2 Features Fast Switching Low ON
8.7. Size:1100K cn wxdh
dh100p28 dh100p28f dh100p28i dh100p28e dh100p28b dh100p28d.pdf
DH100P28/DH100P28F/DH100P28I DH100P28E/DH100P28B/DH100P28D 30A 100V P-channel Enhancement Mode Power MOSFET 1 Description These P-channel enhancement mode power mosfets used 2 D advanced trench technology design, provided excellent V = -100V DSS Rdson and low gate charge. Which accords with the RoHS G R = 47m DS(on) (TYP) standard. 1 3 S ID =-30A 2 Features Low on resista
8.8. Size:1100K cn wxdh
dh100p30c dh100p30cf dh100p30ci dh100p30ce dh100p30cb dh100p30cd.pdf
DH100P30C/DH100P30CF/DH100P30CI DH100P30CE/DH100P30CB/DH100P30CD 30A 100V P-channel Enhancement Mode Power MOSFET 1 Description These P-channel enhancement mode power mosfets used 2 D advanced trench technology design, provided excellent V = -100V DSS Rdson and low gate charge. Which accords with the RoHS G R = 40m DS(on) (TYP) standard. 1 3 S ID =-30A 2 Features Low on r
8.9. Size:1466K cn wxdh
dh100p70 dh100p70f dh100p70i dh100p70e.pdf
DH100P70/DH100P70F/ DH100P70I/DH100P70E 80A 100V P-channel Enhancement Mode Power MOSFET 1 Description These P-channel enhanced vdmosfets, used advanced VDSS = -100V trench technology and design, provide to excellent Rdson with low gate charge. Which accords with the RDS =22m (on) (TYP) RoHS standard. ID = -80A 2 Features Fast switching Low on resistance Low gate ch
8.10. Size:1146K cn wxdh
dh100p35 dh100p35f dh100p35i dh100p35e dh100p35b dh100p35d.pdf
DH100P35/DH100P35F/DH100P35I/ DH100P35E/DH100P35B/DH100P35D 35A 100V P-channel Enhancement Mode Power MOSFET 1 Description These P-channel Enhanced VDMOSFETs, Used VDSS = -100V advanced trench technology and design, provide to excellent Rdson with low gate charge. Which accords RDS =37m (on) (TYP) with the RoHS standard. ID = -35A 2 Features Fast Switching Low ON Resista
Otros transistores... DH300P06I, DH300P06L, DH3205A, DH3N90, DH100N03B13, DH100N06, DH100P18, DH100P18B, 8205A, DH100P18E, DH100P18F, DH100P18I, DH100P18V, DH100P25, DH100P25B, DH100P25D, DH100P25E
