All MOSFET. DH100P18D Datasheet

 

DH100P18D Datasheet and Replacement


   Type Designator: DH100P18D
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 63 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 13 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 27.3 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.185 Ohm
   Package: TO252
 

 DH100P18D substitution

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DH100P18D Datasheet (PDF)

 ..1. Size:1048K  cn wxdh
dh100p18 dh100p18f dh100p18i dh100p18e dh100p18b dh100p18d.pdf pdf_icon

DH100P18D

DH100P18DH100P18F/DH100P18IDH100P18E/DH100P18B/DH100P18D13A 100V P-channel Enhancement Mode Power MOSFET1 DescriptionThese P-channel enhancement mode power mosfets usedV =-100VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSR = 165mDS(on) (TYP)standard.I = -13AD2 Features Low on resistance Low

 6.1. Size:537K  cn wxdh
dh100p18v.pdf pdf_icon

DH100P18D

DH100P18V-6A -100V P-channel Enhancement Mode Power MOSFET1 DescriptionThese P-channel enhancement mode power mosfets usedV =-100VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSR = 160mDS(on) (TYP)standard.I = -6AD2 Features Low on resistance Low gate charge Fast switching Low reverse

 8.1. Size:1193K  china
dh100p30.pdf pdf_icon

DH100P18D

DH100P30/DH100P30F/DH100P30I/DH100P30E/DH100P30B/DH100P30D30A 100V P-channel Enhancement Mode Power MOSFET1 DescriptionThese P-channel Enhanced VDMOSFETs, UsedV -100VDSS =advanced trench technology and design, provide toexcellent R with low gate charge. Which accords RDSON DS(on) TYP) =35mwith the RoHS standard.I = -30AD2 Features Fast Switching Low ON

 8.2. Size:788K  cn wxdh
dh100p40d.pdf pdf_icon

DH100P18D

DH100P40D40A 100V P-channel Enhancement Mode Power MOSFET1 DescriptionThese P-channel enhanced vdmosfets, usedV = -100VDSSadvanced trench technology and design, provide toexcellent Rdson with low gate charge. Which accordsR =31mDS(on) (TYP)with the RoHS standard.I = -40AD2 Features Fast switching Low on gate charge Low reverse Transfer capacitances

Datasheet: DH300P06I , DH300P06L , DH3205A , DH3N90 , DH100N03B13 , DH100N06 , DH100P18 , DH100P18B , 2SK3878 , DH100P18E , DH100P18F , DH100P18I , DH100P18V , DH100P25 , DH100P25B , DH100P25D , DH100P25E .

History: DH026N06I | AOB66919L | HGN080N10AL | TPCA8027-H | IRFSL4710PBF | SSF2610E | 2SK1064

Keywords - DH100P18D MOSFET datasheet

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