FQS4900 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FQS4900
Tipo de FET: MOSFET
Polaridad de transistor: NP
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60(300) V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 1.3(0.3) A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 21(25) nS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.55(15.5) Ohm
Paquete / Cubierta: SOP8
Búsqueda de reemplazo de MOSFET FQS4900
Principales características: FQS4900
fqs4900.pdf
August 2000 TM QFET QFET QFET QFET FQS4900 Dual N & P-Channel, Logic Level MOSFET General Description Features These dual N and P-channel enhancement mode power N-Channel 1.3A, 60V, RDS(on) = 0.55 @ VGS = 10 V field effect transistors are produced using Fairchild s RDS(on) = 0.65 @ VGS = 5 V proprietary, planar stripe, DMOS technology. P-Channel -0.3A, -300V, RDS(on) =
fqs4901.pdf
May 2000 TM QFET QFET QFET QFET 400V DuaI N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 0.45A, 400V, RDS(on) = 4.2 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 5.8 nC) planar stripe, DMOS technology. Low Crss ( typical 5.0 pF) This advanced technology has b
fqs4903.pdf
May 2000 TM QFET QFET QFET QFET 500V DuaI N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 0.37A, 500V, RDS(on) = 6.2 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 6.3 nC) planar stripe, DMOS technology. Low Crss ( typical 4.5 pF) This advanced technology has b
Otros transistores... FDMS7680 , FQPF8N80C , FQD5N15 , FQPF8N90C , FQPF9N25C , FQPF9N50CF , FQPF9N90C , FQPF9P25 , IRFZ46N , FCI25N60N , FQS4901 , FCP25N60N , FQS4903 , FQT13N06 , FQT13N06L , FQT1N60C , HUF76413DKF085 .
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