FQS4900 MOSFET. Datasheet pdf. Equivalent
Type Designator: FQS4900
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pdⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60(300) V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.95 V
|Id|ⓘ - Maximum Drain Current: 1.3(0.3) A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 1.6(3.6) nC
trⓘ - Rise Time: 21(25) nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.55(15.5) Ohm
Package: SOP8
FQS4900 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FQS4900 Datasheet (PDF)
fqs4900.pdf
August 2000TMQFETQFETQFETQFETFQS4900Dual N & P-Channel, Logic Level MOSFETGeneral Description FeaturesThese dual N and P-channel enhancement mode power N-Channel 1.3A, 60V, RDS(on) = 0.55 @ VGS = 10 Vfield effect transistors are produced using Fairchilds RDS(on) = 0.65 @ VGS = 5 Vproprietary, planar stripe, DMOS technology. P-Channel -0.3A, -300V, RDS(on) =
fqs4901.pdf
May 2000TMQFETQFETQFETQFET 400V DuaI N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 0.45A, 400V, RDS(on) = 4.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.8 nC)planar stripe, DMOS technology. Low Crss ( typical 5.0 pF)This advanced technology has b
fqs4903.pdf
May 2000TMQFETQFETQFETQFET 500V DuaI N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 0.37A, 500V, RDS(on) = 6.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.3 nC)planar stripe, DMOS technology. Low Crss ( typical 4.5 pF)This advanced technology has b
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: CPH5905
History: CPH5905
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