DH025N03F Todos los transistores

 

DH025N03F MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DH025N03F
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 40 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 150 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2 V
   Qgⓘ - Carga de la puerta: 88 nC
   trⓘ - Tiempo de subida: 119 nS
   Cossⓘ - Capacitancia de salida: 561 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0032 Ohm
   Paquete / Cubierta: TO220F
     - Selección de transistores por parámetros

 

DH025N03F Datasheet (PDF)

 ..1. Size:1075K  cn wxdh
 dh025n03 dh025n03f dh025n03e dh025n03i dh025n03b dh025n03d.pdf pdf_icon

DH025N03F

DH025N03/DH025N03F/DH025N03EDH025N03I/DH025N03B/DH025N03D150A 30V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 30VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 2.5mDS(on) (TYP)standard.13 SI = 150AD2 Features Low on resi

 7.1. Size:1189K  cn wxdh
 dh025n04 dh025n04f dh025n04i dh025n04e dh025n04b dh025n04d.pdf pdf_icon

DH025N03F

DH025N04/DH025N04F/DH025N04IDH025N04E/DH025N04B/DH025N04D130A 40V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 40VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 2.8mDS(on) (TYP)standard.13 SI = 130AD2 Features Low on resi

 7.2. Size:1316K  cn wxdh
 dh025n08.pdf pdf_icon

DH025N03F

DH025N0885V/2.9m/215A N-MOSFETFeatures Key Parameters Fast switching VDS 85V Low on resistance RDS(on)typ. 2.9m Low gate charge ID 215A High avalanche current Vth 2.9V Low reverse transfer capacitances Ciss@10V 17292pF 100% single pulse avalanche energy test Qgd 94nC 100% VDS testApplications Motor Control and Drive Charge/Discharge for B

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
Back to Top

 


 
.