DH400P06B Todos los transistores

 

DH400P06B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DH400P06B
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 105 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 40 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 58.2 nS
   Cossⓘ - Capacitancia de salida: 194 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm
   Paquete / Cubierta: TO251
 

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DH400P06B Datasheet (PDF)

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dh400p06 dh400p06f dh400p06i dh400p06e dh400p06b dh400p06d.pdf pdf_icon

DH400P06B

DH400P06/DH400P06F/DH400P06IDH400P06E/DH400P06B/DH400P06D40A 60V P-channel Enhancement Mode Power MOSFET1 DescriptionThese P-channel enhanced vdmosfets, used advancedV = -60VDSStrench technology and design, provide to excellentRdson with low gate charge. Which accords with theR =32mDS(on) (TYP)RoHS standard.I = -40AD2 Features Fast switching Low on resist

 6.1. Size:969K  cn wxdh
dh400p06ld dh400p06lb.pdf pdf_icon

DH400P06B

DH400P06LD&DH400P06LB-40A -60V P-channel Enhancement Mode Power MOSFET1 DescriptionThese P-channel enhancement mode power mosfets usedV = -60VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSR = 22mDS(on) (TYP)standard.I = -40AD2 Features Low on resistance Low gate charge Fast switching

Otros transistores... DH140N10D , DH240N06L , DH240N06LB , DH240N06LD , DH240N06LE , DH240N06LF , DH240N06LI , DH400P06 , 13N50 , DH400P06D , DH400P06E , DH400P06F , DH400P06I , DH400P06LB , DH400P06LD , DH025N08 , DH026N06 .

History: HY4008P | IPD60R1K5CE | CHM4435AZGP | IXFV10N100PS | PSMNR60-25YLH | NTMFS4C054N | HGB035N10A

 

 
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