DH400P06B Todos los transistores

 

DH400P06B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DH400P06B
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 105 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 40 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 58.2 nS
   Cossⓘ - Capacitancia de salida: 194 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm
   Paquete / Cubierta: TO251
     - Selección de transistores por parámetros

 

DH400P06B Datasheet (PDF)

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 dh400p06 dh400p06f dh400p06i dh400p06e dh400p06b dh400p06d.pdf pdf_icon

DH400P06B

DH400P06/DH400P06F/DH400P06IDH400P06E/DH400P06B/DH400P06D40A 60V P-channel Enhancement Mode Power MOSFET1 DescriptionThese P-channel enhanced vdmosfets, used advancedV = -60VDSStrench technology and design, provide to excellentRdson with low gate charge. Which accords with theR =32mDS(on) (TYP)RoHS standard.I = -40AD2 Features Fast switching Low on resist

 6.1. Size:969K  cn wxdh
 dh400p06ld dh400p06lb.pdf pdf_icon

DH400P06B

DH400P06LD&DH400P06LB-40A -60V P-channel Enhancement Mode Power MOSFET1 DescriptionThese P-channel enhancement mode power mosfets usedV = -60VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSR = 22mDS(on) (TYP)standard.I = -40AD2 Features Low on resistance Low gate charge Fast switching

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: WMJ38N60C2 | SSF6N80A | IRFR012 | AO6804A | TK80F08K3 | HAT1038R | IRF830FI

 

 
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