DH400P06D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DH400P06D
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 105 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 40 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 58.2 nS
Cossⓘ - Capacitancia de salida: 194 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm
Paquete / Cubierta: TO252
- Selección de transistores por parámetros
DH400P06D Datasheet (PDF)
dh400p06 dh400p06f dh400p06i dh400p06e dh400p06b dh400p06d.pdf

DH400P06/DH400P06F/DH400P06IDH400P06E/DH400P06B/DH400P06D40A 60V P-channel Enhancement Mode Power MOSFET1 DescriptionThese P-channel enhanced vdmosfets, used advancedV = -60VDSStrench technology and design, provide to excellentRdson with low gate charge. Which accords with theR =32mDS(on) (TYP)RoHS standard.I = -40AD2 Features Fast switching Low on resist
dh400p06ld dh400p06lb.pdf

DH400P06LD&DH400P06LB-40A -60V P-channel Enhancement Mode Power MOSFET1 DescriptionThese P-channel enhancement mode power mosfets usedV = -60VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSR = 22mDS(on) (TYP)standard.I = -40AD2 Features Low on resistance Low gate charge Fast switching
Otros transistores... AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , IRFZ48N , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .
History: DMN3052LSS | FHF630A | 9N80A
History: DMN3052LSS | FHF630A | 9N80A



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