DH400P06LD MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: DH400P06LD

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 158 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 40 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 6.4 nS

Cossⓘ - Capacitancia de salida: 180 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.03 Ohm

Encapsulados: TO252

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DH400P06LD datasheet

 ..1. Size:969K  cn wxdh
 dh400p06ld dh400p06lb.pdf pdf_icon

DH400P06LD

DH400P06LD&DH400P06LB -40A -60V P-channel Enhancement Mode Power MOSFET 1 Description These P-channel enhancement mode power mosfets used V = -60V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS R = 22m DS(on) (TYP) standard. I = -40A D 2 Features Low on resistance Low gate charge Fast switching

 6.1. Size:1213K  cn wxdh
 dh400p06 dh400p06f dh400p06i dh400p06e dh400p06b dh400p06d.pdf pdf_icon

DH400P06LD

DH400P06/DH400P06F/DH400P06I DH400P06E/DH400P06B/DH400P06D 40A 60V P-channel Enhancement Mode Power MOSFET 1 Description These P-channel enhanced vdmosfets, used advanced V = -60V DSS trench technology and design, provide to excellent Rdson with low gate charge. Which accords with the R =32m DS(on) (TYP) RoHS standard. I = -40A D 2 Features Fast switching Low on resist

Otros transistores... DH240N06LI, DH400P06, DH400P06B, DH400P06D, DH400P06E, DH400P06F, DH400P06I, DH400P06LB, IRF520, DH025N08, DH026N06, DH026N06B, DH026N06D, DH026N06E, DH026N06F, DH026N06I, DH028N03