DH400P06LD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DH400P06LD
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 158 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 40 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 6.4 nS
Cossⓘ - Capacitancia de salida: 180 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.03 Ohm
Paquete / Cubierta: TO252
- Selección de transistores por parámetros
DH400P06LD Datasheet (PDF)
dh400p06ld dh400p06lb.pdf

DH400P06LD&DH400P06LB-40A -60V P-channel Enhancement Mode Power MOSFET1 DescriptionThese P-channel enhancement mode power mosfets usedV = -60VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSR = 22mDS(on) (TYP)standard.I = -40AD2 Features Low on resistance Low gate charge Fast switching
dh400p06 dh400p06f dh400p06i dh400p06e dh400p06b dh400p06d.pdf

DH400P06/DH400P06F/DH400P06IDH400P06E/DH400P06B/DH400P06D40A 60V P-channel Enhancement Mode Power MOSFET1 DescriptionThese P-channel enhanced vdmosfets, used advancedV = -60VDSStrench technology and design, provide to excellentRdson with low gate charge. Which accords with theR =32mDS(on) (TYP)RoHS standard.I = -40AD2 Features Fast switching Low on resist
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: FDC654P | OSG55R074HSZF | IPI023NE7N3G | IXFX30N110P | 2SK1501 | SIF110N060 | PNMET20V06E
History: FDC654P | OSG55R074HSZF | IPI023NE7N3G | IXFX30N110P | 2SK1501 | SIF110N060 | PNMET20V06E



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