All MOSFET. DH400P06LD Datasheet

 

DH400P06LD Datasheet and Replacement


   Type Designator: DH400P06LD
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 158 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 6.4 nS
   Cossⓘ - Output Capacitance: 180 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: TO252
 

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DH400P06LD Datasheet (PDF)

 ..1. Size:969K  cn wxdh
 dh400p06ld dh400p06lb.pdf pdf_icon

DH400P06LD

DH400P06LD&DH400P06LB-40A -60V P-channel Enhancement Mode Power MOSFET1 DescriptionThese P-channel enhancement mode power mosfets usedV = -60VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSR = 22mDS(on) (TYP)standard.I = -40AD2 Features Low on resistance Low gate charge Fast switching

 6.1. Size:1213K  cn wxdh
 dh400p06 dh400p06f dh400p06i dh400p06e dh400p06b dh400p06d.pdf pdf_icon

DH400P06LD

DH400P06/DH400P06F/DH400P06IDH400P06E/DH400P06B/DH400P06D40A 60V P-channel Enhancement Mode Power MOSFET1 DescriptionThese P-channel enhanced vdmosfets, used advancedV = -60VDSStrench technology and design, provide to excellentRdson with low gate charge. Which accords with theR =32mDS(on) (TYP)RoHS standard.I = -40AD2 Features Fast switching Low on resist

Datasheet: DH240N06LI , DH400P06 , DH400P06B , DH400P06D , DH400P06E , DH400P06F , DH400P06I , DH400P06LB , CS150N03A8 , DH025N08 , DH026N06 , DH026N06B , DH026N06D , DH026N06E , DH026N06F , DH026N06I , DH028N03 .

History: AM6544C | APTC60DAM18CTG | DMP6110SSD | KI2300 | EM6K7 | ELM56801EA | HUFA75829D3S

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