DH400P06LD Specs and Replacement
Type Designator: DH400P06LD
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 158 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 40 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 6.4 nS
Cossⓘ - Output Capacitance: 180 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: TO252
DH400P06LD substitution
- MOSFET ⓘ Cross-Reference Search
DH400P06LD datasheet
dh400p06ld dh400p06lb.pdf
DH400P06LD&DH400P06LB -40A -60V P-channel Enhancement Mode Power MOSFET 1 Description These P-channel enhancement mode power mosfets used V = -60V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS R = 22m DS(on) (TYP) standard. I = -40A D 2 Features Low on resistance Low gate charge Fast switching ... See More ⇒
dh400p06 dh400p06f dh400p06i dh400p06e dh400p06b dh400p06d.pdf
DH400P06/DH400P06F/DH400P06I DH400P06E/DH400P06B/DH400P06D 40A 60V P-channel Enhancement Mode Power MOSFET 1 Description These P-channel enhanced vdmosfets, used advanced V = -60V DSS trench technology and design, provide to excellent Rdson with low gate charge. Which accords with the R =32m DS(on) (TYP) RoHS standard. I = -40A D 2 Features Fast switching Low on resist... See More ⇒
Detailed specifications: DH240N06LI, DH400P06, DH400P06B, DH400P06D, DH400P06E, DH400P06F, DH400P06I, DH400P06LB, IRF520, DH025N08, DH026N06, DH026N06B, DH026N06D, DH026N06E, DH026N06F, DH026N06I, DH028N03
Keywords - DH400P06LD MOSFET specs
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