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FQT13N06L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQT13N06L

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 2.1 W

Tensión drenaje-fuente (Vds): 60 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 2.8 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.11 Ohm

Empaquetado / Estuche: SOT223

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FQT13N06L Datasheet (PDF)

1.1. fqt13n06l.pdf Size:675K _fairchild_semi

FQT13N06L
FQT13N06L

May 2001 TM QFET FQT13N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.8A, 60V, RDS(on) = 0.11? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.8 nC) planar stripe, DMOS technology. Low Crss ( typical 17 pF) This advanced technology has been especially tailored to Fa

1.2. fqt13n06ltf fqt13n06tf.pdf Size:674K _fairchild_semi

FQT13N06L
FQT13N06L

May 2001 TM QFET FQT13N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 2.8A, 60V, RDS(on) = 0.11Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 4.8 nC) planar stripe, DMOS technology. • Low Crss ( typical 17 pF) This advanced technology has been especially tail

 2.1. fqt13n06.pdf Size:688K _fairchild_semi

FQT13N06L
FQT13N06L

January 2002 TM QFET FQT13N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.8A, 60V, RDS(on) = 0.14? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.8 nC) planar stripe, DMOS technology. Low Crss ( typical 15 pF) This advanced technology has been especially tailored to Fast

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