Справочник MOSFET. FQT13N06L

 

FQT13N06L Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: FQT13N06L
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 2.1 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 2.8 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.11 Ohm
   Тип корпуса: SOT223
 

 Аналог (замена) для FQT13N06L

   - подбор ⓘ MOSFET транзистора по параметрам

 

FQT13N06L Datasheet (PDF)

 ..1. Size:675K  fairchild semi
 fqt13n06l.pdf pdf_icon

FQT13N06L

May 2001TMQFETFQT13N06L60V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.8A, 60V, RDS(on) = 0.11 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.8 nC)planar stripe, DMOS technology. Low Crss ( typical 17 pF)This advanced technology has been especially tail

 ..2. Size:908K  onsemi
 fqt13n06l.pdf pdf_icon

FQT13N06L

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 0.1. Size:674K  fairchild semi
 fqt13n06ltf fqt13n06tf.pdf pdf_icon

FQT13N06L

May 2001TMQFETFQT13N06L60V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.8A, 60V, RDS(on) = 0.11 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.8 nC)planar stripe, DMOS technology. Low Crss ( typical 17 pF)This advanced technology has been especially tail

 6.1. Size:688K  fairchild semi
 fqt13n06.pdf pdf_icon

FQT13N06L

January 2002TMQFETFQT13N0660V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.8A, 60V, RDS(on) = 0.14 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.8 nC)planar stripe, DMOS technology. Low Crss ( typical 15 pF)This advanced technology has been especially tailore

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Другие MOSFET... FQPF9N90C , FQPF9P25 , FQS4900 , FCI25N60N , FQS4901 , FCP25N60N , FQS4903 , FQT13N06 , IRF9640 , FQT1N60C , HUF76413DKF085 , FQT1N80 , HUF76407DKF085 , FQT3P20 , FQT4N20L , FDD14AN06LF085 , FQT4N25 .

History: NDF03N60Z

 

 
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