FQT1N60C MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FQT1N60C
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 2.1 W
Tensión drenaje-fuente (Vds): 600 V
Tensión compuerta-fuente (Vgs): 30 V
Corriente continua de drenaje (Id): 0.2 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Resistencia drenaje-fuente RDS(on): 11.5 Ohm
Empaquetado / Estuche: SOT223
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FQT1N60C Datasheet (PDF)
1.1. fqt1n60c fqt1n60ctf ws.pdf 
Size:816K _fairchild_semi
November 2007 ® QFET FQT1N60C N-Channel MOSFET 600V, 0.2A, 11.5Ω Features Description • RDS(on) = 9.3Ω (Typ.)@ VGS = 10V, ID = 0.1A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar • Low gate charge ( Typ. 4.8nC) stripe, DMOS technology. • Low Crss ( Typ. 3.5pF) This advanced technology has been especia
5.1. fqt1n80tf ws.pdf Size:807K _fairchild_semi
November 2007 ® QFET FQT1N80 N-Channel MOSFET 800V, 0.2A, 20Ω Features Description • RDS(on) = 15.5Ω (Typ.)@ VGS = 10V, ID = 0.1A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar • Low gate charge ( Typ. 5.5nC) stripe, DMOS technology. • Low Crss ( Typ. 2.7pF) This advanced technology has been especiall
5.2. fqt1n80.pdf Size:807K _fairchild_semi
November 2007 ® QFET FQT1N80 N-Channel MOSFET 800V, 0.2A, 20Ω Features Description • RDS(on) = 15.5Ω (Typ.)@ VGS = 10V, ID = 0.1A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar • Low gate charge ( Typ. 5.5nC) stripe, DMOS technology. • Low Crss ( Typ. 2.7pF) This advanced technology has been especiall
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
