All MOSFET. FQT1N60C Datasheet

 

FQT1N60C Datasheet and Replacement


   Type Designator: FQT1N60C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 0.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 4.8 nC
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 11.5 Ohm
   Package: SOT223
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FQT1N60C Datasheet (PDF)

 ..1. Size:816K  fairchild semi
 fqt1n60c fqt1n60ctf ws.pdf pdf_icon

FQT1N60C

November 2007 QFETFQT1N60CN-Channel MOSFET600V, 0.2A, 11.5Features Description RDS(on) = 9.3 (Typ.)@ VGS = 10V, ID = 0.1A These N-Channel enhancement mode power field effecttransistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 4.8nC) stripe, DMOS technology. Low Crss ( Typ. 3.5pF)This advanced technology has been especia

 ..2. Size:1221K  onsemi
 fqt1n60c.pdf pdf_icon

FQT1N60C

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.1. Size:807K  fairchild semi
 fqt1n80.pdf pdf_icon

FQT1N60C

November 2007 QFETFQT1N80N-Channel MOSFET800V, 0.2A, 20Features Description RDS(on) = 15.5 (Typ.)@ VGS = 10V, ID = 0.1A These N-Channel enhancement mode power field effecttransistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 5.5nC) stripe, DMOS technology. Low Crss ( Typ. 2.7pF)This advanced technology has been especiall

 9.2. Size:807K  fairchild semi
 fqt1n80tf ws.pdf pdf_icon

FQT1N60C

November 2007 QFETFQT1N80N-Channel MOSFET800V, 0.2A, 20Features Description RDS(on) = 15.5 (Typ.)@ VGS = 10V, ID = 0.1A These N-Channel enhancement mode power field effecttransistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 5.5nC) stripe, DMOS technology. Low Crss ( Typ. 2.7pF)This advanced technology has been especiall

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Datasheet: FQPF9P25 , FQS4900 , FCI25N60N , FQS4901 , FCP25N60N , FQS4903 , FQT13N06 , FQT13N06L , IRFP064N , HUF76413DKF085 , FQT1N80 , HUF76407DKF085 , FQT3P20 , FQT4N20L , FDD14AN06LF085 , FQT4N25 , FQT5P10 .

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