All MOSFET. FQT1N60C Datasheet

 

FQT1N60C MOSFET. Datasheet pdf. Equivalent

Type Designator: FQT1N60C

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 2.1 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 0.2 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 11.5 Ohm

Package: SOT223

FQT1N60C Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQT1N60C Datasheet (PDF)

1.1. fqt1n60c.pdf Size:816K _fairchild_semi

FQT1N60C
FQT1N60C

November 2007 ® QFET FQT1N60C N-Channel MOSFET 600V, 0.2A, 11.5? Features Description • RDS(on) = 9.3? (Typ.)@ VGS = 10V, ID = 0.1A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar • Low gate charge ( Typ. 4.8nC) stripe, DMOS technology. • Low Crss ( Typ. 3.5pF) This advanced technology has been especially tailored to

5.1. fqt1n80.pdf Size:807K _fairchild_semi

FQT1N60C
FQT1N60C

November 2007 ® QFET FQT1N80 N-Channel MOSFET 800V, 0.2A, 20Ω Features Description • RDS(on) = 15.5Ω (Typ.)@ VGS = 10V, ID = 0.1A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar • Low gate charge ( Typ. 5.5nC) stripe, DMOS technology. • Low Crss ( Typ. 2.7pF) This advanced technology has been especiall

Datasheet: FQPF9P25 , FQS4900 , FCI25N60N , FQS4901 , FCP25N60N , FQS4903 , FQT13N06 , FQT13N06L , 2SK117 , HUF76413DK_F085 , FQT1N80 , HUF76407DK_F085 , FQT3P20 , FQT4N20L , FDD14AN06L_F085 , FQT4N25 , FQT5P10 .

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