FQT1N60C MOSFET Datasheet: N-Ch, 600V, 0.2A. Full specification with pinout and replacement list

FQT1N60C Specs and Replacement

Type Designator: FQT1N60C

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 0.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 11.5 Ohm

Package: SOT223

FQT1N60C substitution

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FQT1N60C datasheet

..1. Size:816K fairchild semi
fqt1n60c fqt1n60ctf ws.pdf pdf_icon

November 2007 QFET FQT1N60C N-Channel MOSFET 600V, 0.2A, 11.5 Features Description RDS(on) = 9.3 (Typ.)@ VGS = 10V, ID = 0.1A These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( Typ. 4.8nC) stripe, DMOS technology. Low Crss ( Typ. 3.5pF) This advanced technology has been especia... See More ⇒

..2. Size:1221K onsemi
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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

9.1. Size:807K fairchild semi
fqt1n80.pdf pdf_icon

November 2007 QFET FQT1N80 N-Channel MOSFET 800V, 0.2A, 20 Features Description RDS(on) = 15.5 (Typ.)@ VGS = 10V, ID = 0.1A These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( Typ. 5.5nC) stripe, DMOS technology. Low Crss ( Typ. 2.7pF) This advanced technology has been especiall... See More ⇒

9.2. Size:807K fairchild semi
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