DH100P35B MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

DH100P35B MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: DH100P35B

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 120 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 35 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 90 nS

Cossⓘ - Capacitancia de salida: 270 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.045 Ohm

Encapsulados: TO251

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DH100P35B datasheet

..1. Size:1146K cn wxdh
dh100p35 dh100p35f dh100p35i dh100p35e dh100p35b dh100p35d.pdf pdf_icon

DH100P35/DH100P35F/DH100P35I/ DH100P35E/DH100P35B/DH100P35D 35A 100V P-channel Enhancement Mode Power MOSFET 1 Description These P-channel Enhanced VDMOSFETs, Used VDSS = -100V advanced trench technology and design, provide to excellent Rdson with low gate charge. Which accords RDS =37m (on) (TYP) with the RoHS standard. ID = -35A 2 Features Fast Switching Low ON Resista

7.1. Size:1193K china
dh100p30.pdf pdf_icon

DH100P30/DH100P30F/DH100P30I/ DH100P30E/DH100P30B/DH100P30D 30A 100V P-channel Enhancement Mode Power MOSFET 1 Description These P-channel Enhanced VDMOSFETs, Used V -100V DSS = advanced trench technology and design, provide to excellent R with low gate charge. Which accords R DSON DS(on) TYP) =35m with the RoHS standard. I = -30A D 2 Features Fast Switching Low ON

7.2. Size:1100K cn wxdh
dh100p30a dh100p30af dh100p30ai dh100p30ae dh100p30ab dh100p30ad.pdf pdf_icon

DH100P30A/DH100P30AF/DH100P30AI DH100P30AE/DH100P30AB/DH100P30AD 30A 100V P-channel Enhancement Mode Power MOSFET 1 Description These P-channel enhancement mode power mosfets used 2 D advanced trench technology design, provided excellent V = -100V DSS Rdson and low gate charge. Which accords with the RoHS G R = 47m DS(on) (TYP) standard. 1 3 S ID =-30A 2 Features Low on r

7.3. Size:1238K cn wxdh
dh100p30d.pdf pdf_icon

DH100P30D -100V/33m /-35A P-MOSFET Features Key Parameters VDS Low on resistance -100V RDS(on)typ. Low reverse transfer capacitances 33m ID 100% single pulse avalanche energy test -35A Ciss@10V 100% VDS test 5250pF Pb-Free plating / Halogen-Free / RoHS compliant Qgd 19nC Applications Load switch TO-252 Marking & Packing Information Part # Package

Otros transistores... DH033N04E, DH033N04F, DH033N04I, DH033N04P, DH035N04, DH100P30CF, DH100P30CI, DH100P35, 2N7000, DH100P35D, DH100P35E, DH100P35F, DH100P35I, DH100P40, DH10H035R, DH10H037R, DH116N08

DH100P35B Todos los transistores