DH100P35B. Аналоги и основные параметры

Наименование производителя: DH100P35B

Тип транзистора: MOSFET

Полярность: P

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 120 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 35 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 90 ns

Cossⓘ - Выходная емкость: 270 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.045 Ohm

Тип корпуса: TO251

Аналог (замена) для DH100P35B

- подборⓘ MOSFET транзистора по параметрам

 

DH100P35B даташит

 ..1. Size:1146K  cn wxdh
 dh100p35 dh100p35f dh100p35i dh100p35e dh100p35b dh100p35d.pdf pdf_icon

DH100P35B

DH100P35/DH100P35F/DH100P35I/ DH100P35E/DH100P35B/DH100P35D 35A 100V P-channel Enhancement Mode Power MOSFET 1 Description These P-channel Enhanced VDMOSFETs, Used VDSS = -100V advanced trench technology and design, provide to excellent Rdson with low gate charge. Which accords RDS =37m (on) (TYP) with the RoHS standard. ID = -35A 2 Features Fast Switching Low ON Resista

 7.1. Size:1193K  china
 dh100p30.pdf pdf_icon

DH100P35B

DH100P30/DH100P30F/DH100P30I/ DH100P30E/DH100P30B/DH100P30D 30A 100V P-channel Enhancement Mode Power MOSFET 1 Description These P-channel Enhanced VDMOSFETs, Used V -100V DSS = advanced trench technology and design, provide to excellent R with low gate charge. Which accords R DSON DS(on) TYP) =35m with the RoHS standard. I = -30A D 2 Features Fast Switching Low ON

 7.2. Size:1100K  cn wxdh
 dh100p30a dh100p30af dh100p30ai dh100p30ae dh100p30ab dh100p30ad.pdf pdf_icon

DH100P35B

DH100P30A/DH100P30AF/DH100P30AI DH100P30AE/DH100P30AB/DH100P30AD 30A 100V P-channel Enhancement Mode Power MOSFET 1 Description These P-channel enhancement mode power mosfets used 2 D advanced trench technology design, provided excellent V = -100V DSS Rdson and low gate charge. Which accords with the RoHS G R = 47m DS(on) (TYP) standard. 1 3 S ID =-30A 2 Features Low on r

 7.3. Size:1238K  cn wxdh
 dh100p30d.pdf pdf_icon

DH100P35B

DH100P30D -100V/33m /-35A P-MOSFET Features Key Parameters VDS Low on resistance -100V RDS(on)typ. Low reverse transfer capacitances 33m ID 100% single pulse avalanche energy test -35A Ciss@10V 100% VDS test 5250pF Pb-Free plating / Halogen-Free / RoHS compliant Qgd 19nC Applications Load switch TO-252 Marking & Packing Information Part # Package

ПОКАЗАТЬ ЕЩЁ

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