DH045N04E Todos los transistores

 

DH045N04E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DH045N04E
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 90 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 90 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2 V
   Qgⓘ - Carga de la puerta: 52 nC
   trⓘ - Tiempo de subida: 113 nS
   Cossⓘ - Capacitancia de salida: 232 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0065 Ohm
   Paquete / Cubierta: TO263
     - Selección de transistores por parámetros

 

DH045N04E Datasheet (PDF)

 ..1. Size:1215K  cn wxdh
 dh045n04 dh045n04f dh045n04i dh045n04e dh045n04b dh045n04d.pdf pdf_icon

DH045N04E

DH045N04/DH045N04FDH045N04I/DH045N04E/DH045N04B/DH045N04D90A 40V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 40VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 5.5mDS(on) (TYP)standard.13 SI = 90AD2 Features Low on resist

 6.1. Size:774K  cn wxdh
 dh045n04p.pdf pdf_icon

DH045N04E

DH045N04P80A 40V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 40VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 5.7mDS(on) (TYP)standard.13 SI = 80AD2 Features Low on resistance Low gate charge Fast switching

 7.1. Size:1385K  cn wxdh
 dh045n06 dh045n06f dh045n06i dh045n06e dh045n06b dh045n06d.pdf pdf_icon

DH045N04E

DH045N06/DH045N06F/DH045N06IDH045N06E/DH045N06B/DH045N06D145A 60V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 60VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 4.5mDS(on) (TYP)standard.13 SI = 145AD2 Features Low on resi

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
Back to Top

 


 
.