FQT5P10 Datasheet. Equivalente

 ..1. Size:668K  fairchild semi
 fqt5p10.pdf

TM QFET FQT5P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -1.0A, -100V, RDS(on) = 1.05 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 6.3 nC) planar stripe, DMOS technology. Low Crss ( typical 18 pF) This advanced technology has been especially tailored to

 ..2. Size:881K  onsemi
 fqt5p10.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 0.1. Size:667K  fairchild semi
 fqt5p10tf.pdf

TM QFET FQT5P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -1.0A, -100V, RDS(on) = 1.05 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 6.3 nC) planar stripe, DMOS technology. Low Crss ( typical 18 pF) This advanced technology has been especially tailored to

 0.2. Size:895K  cn vbsemi
 fqt5p10tf.pdf

FQT5P10TF www.VBsemi.tw P-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) Qg (Typ.) 100% Rg and UIS Tested 0.200 at VGS = - 10 V - 3.0 - 100 13.2 nC 0.230 at VGS = - 6 V - 2.4 APPLICATIONS Available Active Clamp in Intermediate DC/ DC Power Supplies S H-Bridge High Side Switch for Lighting Application SOT