FQT5P10 PDF and Equivalents Search

 

FQT5P10 Specs and Replacement

Type Designator: FQT5P10

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.05 Ohm

Package: SOT223

FQT5P10 substitution

- MOSFET ⓘ Cross-Reference Search

 

FQT5P10 datasheet

 ..1. Size:668K  fairchild semi
fqt5p10.pdf pdf_icon

FQT5P10

TM QFET FQT5P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -1.0A, -100V, RDS(on) = 1.05 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 6.3 nC) planar stripe, DMOS technology. Low Crss ( typical 18 pF) This advanced technology has been especially tailored to ... See More ⇒

 ..2. Size:881K  onsemi
fqt5p10.pdf pdf_icon

FQT5P10

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 0.1. Size:667K  fairchild semi
fqt5p10tf.pdf pdf_icon

FQT5P10

TM QFET FQT5P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -1.0A, -100V, RDS(on) = 1.05 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 6.3 nC) planar stripe, DMOS technology. Low Crss ( typical 18 pF) This advanced technology has been especially tailored to ... See More ⇒

 0.2. Size:895K  cn vbsemi
fqt5p10tf.pdf pdf_icon

FQT5P10

FQT5P10TF www.VBsemi.tw P-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) Qg (Typ.) 100% Rg and UIS Tested 0.200 at VGS = - 10 V - 3.0 - 100 13.2 nC 0.230 at VGS = - 6 V - 2.4 APPLICATIONS Available Active Clamp in Intermediate DC/ DC Power Supplies S H-Bridge High Side Switch for Lighting Application SOT... See More ⇒

Detailed specifications: FQT1N60C , HUF76413DKF085 , FQT1N80 , HUF76407DKF085 , FQT3P20 , FQT4N20L , FDD14AN06LF085 , FQT4N25 , IRF730 , FQT7N10 , FDB14AN06LF085 , FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 .

Keywords - FQT5P10 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 


 
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