All MOSFET. FQT5P10 Datasheet

 

FQT5P10 MOSFET. Datasheet pdf. Equivalent

Type Designator: FQT5P10

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 2 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 1 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 1.05 Ohm

Package: SOT223

FQT5P10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQT5P10 Datasheet (PDF)

1.1. fqt5p10.pdf Size:668K _fairchild_semi

FQT5P10
FQT5P10

TM QFET FQT5P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect • -1.0A, -100V, RDS(on) = 1.05? @VGS = -10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 6.3 nC) planar stripe, DMOS technology. • Low Crss ( typical 18 pF) This advanced technology has been especially tailored to • Fast switching

Datasheet: FQT1N60C , HUF76413DK_F085 , FQT1N80 , HUF76407DK_F085 , FQT3P20 , FQT4N20L , FDD14AN06L_F085 , FQT4N25 , APT50M38JFLL , FQT7N10 , FDB14AN06L_F085 , FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 .

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