FQT7N10 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQT7N10  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V

|Id|ⓘ - Corriente continua de drenaje: 1.7 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.35 Ohm

Encapsulados: SOT223

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FQT7N10 datasheet

 ..1. Size:638K  fairchild semi
 fqt7n10.pdf pdf_icon

FQT7N10

May 2001 TM QFET FQT7N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 1.7A, 100V, RDS(on) = 0.35 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 5.8 nC) planar stripe, DMOS technology. Low Crss ( typical 10 pF) This advanced technology has been especially tailored t

 0.1. Size:637K  fairchild semi
 fqt7n10tf.pdf pdf_icon

FQT7N10

May 2001 TM QFET FQT7N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 1.7A, 100V, RDS(on) = 0.35 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 5.8 nC) planar stripe, DMOS technology. Low Crss ( typical 10 pF) This advanced technology has been especially tailored t

 0.2. Size:640K  fairchild semi
 fqt7n10ltf.pdf pdf_icon

FQT7N10

May 2001 TM QFET FQT7N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 1.7A, 100V, RDS(on) = 0.35 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 4.6 nC) planar stripe, DMOS technology. Low Crss ( typical 12 pF) This advanced technology has been especially tai

 0.3. Size:642K  fairchild semi
 fqt7n10l.pdf pdf_icon

FQT7N10

May 2001 TM QFET FQT7N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 1.7A, 100V, RDS(on) = 0.35 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 4.6 nC) planar stripe, DMOS technology. Low Crss ( typical 12 pF) This advanced technology has been especially tai

MOSTRAR MÁS

Otros transistores... HUF76413DKF085, FQT1N80, HUF76407DKF085, FQT3P20, FQT4N20L, FDD14AN06LF085, FQT4N25, FQT5P10, IRFZ44N, FDB14AN06LF085, FQT7N10L, FDP083N15A, FQU10N20C, FDP075N15A, FQU11P06, FQU12N20, FDPF085N10A