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FQT7N10 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FQT7N10
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 1.7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.35 Ohm
   Paquete / Cubierta: SOT223
     - Selección de transistores por parámetros

 

FQT7N10 Datasheet (PDF)

 ..1. Size:638K  fairchild semi
 fqt7n10.pdf pdf_icon

FQT7N10

May 2001TMQFETFQT7N10100V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 1.7A, 100V, RDS(on) = 0.35 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.8 nC)planar stripe, DMOS technology. Low Crss ( typical 10 pF)This advanced technology has been especially tailored t

 0.1. Size:637K  fairchild semi
 fqt7n10tf.pdf pdf_icon

FQT7N10

May 2001TMQFETFQT7N10100V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 1.7A, 100V, RDS(on) = 0.35 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.8 nC)planar stripe, DMOS technology. Low Crss ( typical 10 pF)This advanced technology has been especially tailored t

 0.2. Size:640K  fairchild semi
 fqt7n10ltf.pdf pdf_icon

FQT7N10

May 2001TMQFETFQT7N10L100V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 1.7A, 100V, RDS(on) = 0.35 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.6 nC)planar stripe, DMOS technology. Low Crss ( typical 12 pF)This advanced technology has been especially tai

 0.3. Size:642K  fairchild semi
 fqt7n10l.pdf pdf_icon

FQT7N10

May 2001TMQFETFQT7N10L100V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 1.7A, 100V, RDS(on) = 0.35 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.6 nC)planar stripe, DMOS technology. Low Crss ( typical 12 pF)This advanced technology has been especially tai

MOSTRAR MÁS

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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