FQT7N10 Specs and Replacement
Type Designator: FQT7N10
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 1.7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 4 V
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm
Package: SOT223
FQT7N10 substitution
- MOSFET ⓘ Cross-Reference Search
FQT7N10 datasheet
fqt7n10.pdf
May 2001 TM QFET FQT7N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 1.7A, 100V, RDS(on) = 0.35 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 5.8 nC) planar stripe, DMOS technology. Low Crss ( typical 10 pF) This advanced technology has been especially tailored t... See More ⇒
fqt7n10tf.pdf
May 2001 TM QFET FQT7N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 1.7A, 100V, RDS(on) = 0.35 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 5.8 nC) planar stripe, DMOS technology. Low Crss ( typical 10 pF) This advanced technology has been especially tailored t... See More ⇒
fqt7n10ltf.pdf
May 2001 TM QFET FQT7N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 1.7A, 100V, RDS(on) = 0.35 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 4.6 nC) planar stripe, DMOS technology. Low Crss ( typical 12 pF) This advanced technology has been especially tai... See More ⇒
fqt7n10l.pdf
May 2001 TM QFET FQT7N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 1.7A, 100V, RDS(on) = 0.35 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 4.6 nC) planar stripe, DMOS technology. Low Crss ( typical 12 pF) This advanced technology has been especially tai... See More ⇒
Detailed specifications: HUF76413DKF085 , FQT1N80 , HUF76407DKF085 , FQT3P20 , FQT4N20L , FDD14AN06LF085 , FQT4N25 , FQT5P10 , IRFZ44N , FDB14AN06LF085 , FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A .
Keywords - FQT7N10 MOSFET specs
FQT7N10 cross reference
FQT7N10 equivalent finder
FQT7N10 pdf lookup
FQT7N10 substitution
FQT7N10 replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
