FQT7N10L Todos los transistores

 

FQT7N10L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQT7N10L

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 2 W

Tensión drenaje-fuente (Vds): 100 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 1.7 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.35 Ohm

Empaquetado / Estuche: SOT223

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FQT7N10L Datasheet (PDF)

1.1. fqt7n10ltf.pdf Size:640K _fairchild_semi

FQT7N10L
FQT7N10L

May 2001 TM QFET FQT7N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 1.7A, 100V, RDS(on) = 0.35Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 4.6 nC) planar stripe, DMOS technology. • Low Crss ( typical 12 pF) This advanced technology has been especially tai

1.2. fqt7n10l.pdf Size:642K _fairchild_semi

FQT7N10L
FQT7N10L

May 2001 TM QFET FQT7N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 1.7A, 100V, RDS(on) = 0.35? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.6 nC) planar stripe, DMOS technology. Low Crss ( typical 12 pF) This advanced technology has been especially tailored to F

 3.1. fqt7n10.pdf Size:638K _fairchild_semi

FQT7N10L
FQT7N10L

May 2001 TM QFET FQT7N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 1.7A, 100V, RDS(on) = 0.35? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.8 nC) planar stripe, DMOS technology. Low Crss ( typical 10 pF) This advanced technology has been especially tailored to Fast swi

3.2. fqt7n10tf.pdf Size:637K _fairchild_semi

FQT7N10L
FQT7N10L

May 2001 TM QFET FQT7N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 1.7A, 100V, RDS(on) = 0.35Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 5.8 nC) planar stripe, DMOS technology. • Low Crss ( typical 10 pF) This advanced technology has been especially tailored t

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