All MOSFET. FQT7N10L Datasheet

 

FQT7N10L MOSFET. Datasheet pdf. Equivalent

Type Designator: FQT7N10L

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 2 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 1.7 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.35 Ohm

Package: SOT223

FQT7N10L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

FQT7N10L Datasheet (PDF)

1.1. fqt7n10ltf.pdf Size:640K _fairchild_semi

FQT7N10L
FQT7N10L

May 2001 TM QFET FQT7N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 1.7A, 100V, RDS(on) = 0.35Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 4.6 nC) planar stripe, DMOS technology. • Low Crss ( typical 12 pF) This advanced technology has been especially tai

1.2. fqt7n10l.pdf Size:642K _fairchild_semi

FQT7N10L
FQT7N10L

May 2001 TM QFET FQT7N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 1.7A, 100V, RDS(on) = 0.35? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.6 nC) planar stripe, DMOS technology. Low Crss ( typical 12 pF) This advanced technology has been especially tailored to F

 3.1. fqt7n10.pdf Size:638K _fairchild_semi

FQT7N10L
FQT7N10L

May 2001 TM QFET FQT7N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 1.7A, 100V, RDS(on) = 0.35? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.8 nC) planar stripe, DMOS technology. Low Crss ( typical 10 pF) This advanced technology has been especially tailored to Fast swi

3.2. fqt7n10tf.pdf Size:637K _fairchild_semi

FQT7N10L
FQT7N10L

May 2001 TM QFET FQT7N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 1.7A, 100V, RDS(on) = 0.35Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 5.8 nC) planar stripe, DMOS technology. • Low Crss ( typical 10 pF) This advanced technology has been especially tailored t

Datasheet: IRFP333 , IRFP340 , IRFP340A , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , 75339P , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC .

 
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