All MOSFET. FQT7N10L Datasheet

 

FQT7N10L MOSFET. Datasheet pdf. Equivalent


   Type Designator: FQT7N10L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 1.7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 4.6 nC
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm
   Package: SOT223

 FQT7N10L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQT7N10L Datasheet (PDF)

 ..1. Size:642K  fairchild semi
 fqt7n10l.pdf

FQT7N10L FQT7N10L

May 2001TMQFETFQT7N10L100V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 1.7A, 100V, RDS(on) = 0.35 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.6 nC)planar stripe, DMOS technology. Low Crss ( typical 12 pF)This advanced technology has been especially tai

 ..2. Size:881K  onsemi
 fqt7n10l.pdf

FQT7N10L FQT7N10L

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 0.1. Size:640K  fairchild semi
 fqt7n10ltf.pdf

FQT7N10L FQT7N10L

May 2001TMQFETFQT7N10L100V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 1.7A, 100V, RDS(on) = 0.35 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.6 nC)planar stripe, DMOS technology. Low Crss ( typical 12 pF)This advanced technology has been especially tai

 7.1. Size:637K  fairchild semi
 fqt7n10tf.pdf

FQT7N10L FQT7N10L

May 2001TMQFETFQT7N10100V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 1.7A, 100V, RDS(on) = 0.35 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.8 nC)planar stripe, DMOS technology. Low Crss ( typical 10 pF)This advanced technology has been especially tailored t

 7.2. Size:638K  fairchild semi
 fqt7n10.pdf

FQT7N10L FQT7N10L

May 2001TMQFETFQT7N10100V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 1.7A, 100V, RDS(on) = 0.35 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.8 nC)planar stripe, DMOS technology. Low Crss ( typical 10 pF)This advanced technology has been especially tailored t

Datasheet: HUF76407DKF085 , FQT3P20 , FQT4N20L , FDD14AN06LF085 , FQT4N25 , FQT5P10 , FQT7N10 , FDB14AN06LF085 , IRF740 , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , FQU13N10L .

 

 
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