All MOSFET. FQT7N10L Datasheet

 

FQT7N10L MOSFET. Datasheet pdf. Equivalent

Type Designator: FQT7N10L

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 2 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 1.7 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.35 Ohm

Package: SOT223

FQT7N10L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQT7N10L Datasheet (PDF)

1.1. fqt7n10l.pdf Size:642K _fairchild_semi

FQT7N10L
FQT7N10L

May 2001 TM QFET FQT7N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 1.7A, 100V, RDS(on) = 0.35? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 4.6 nC) planar stripe, DMOS technology. • Low Crss ( typical 12 pF) This advanced technology has been especially tailored to • F

3.1. fqt7n10.pdf Size:638K _fairchild_semi

FQT7N10L
FQT7N10L

May 2001 TM QFET FQT7N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 1.7A, 100V, RDS(on) = 0.35? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 5.8 nC) planar stripe, DMOS technology. • Low Crss ( typical 10 pF) This advanced technology has been especially tailored to • Fast swi

 

Datasheet: HUF76407DK_F085 , FQT3P20 , FQT4N20L , FDD14AN06L_F085 , FQT4N25 , FQT5P10 , FQT7N10 , FDB14AN06L_F085 , IRF740 , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , FQU13N10L .

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