FQT7N10L Datasheet. Specs and Replacement

Type Designator: FQT7N10L  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 1.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm

Package: SOT223

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FQT7N10L datasheet

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FQT7N10L

May 2001 TM QFET FQT7N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 1.7A, 100V, RDS(on) = 0.35 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 4.6 nC) planar stripe, DMOS technology. Low Crss ( typical 12 pF) This advanced technology has been especially tai... See More ⇒

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FQT7N10L

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 0.1. Size:640K  fairchild semi
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FQT7N10L

May 2001 TM QFET FQT7N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 1.7A, 100V, RDS(on) = 0.35 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 4.6 nC) planar stripe, DMOS technology. Low Crss ( typical 12 pF) This advanced technology has been especially tai... See More ⇒

 7.1. Size:637K  fairchild semi
 fqt7n10tf.pdf pdf_icon

FQT7N10L

May 2001 TM QFET FQT7N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 1.7A, 100V, RDS(on) = 0.35 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 5.8 nC) planar stripe, DMOS technology. Low Crss ( typical 10 pF) This advanced technology has been especially tailored t... See More ⇒

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Detailed specifications: HUF76407DKF085, FQT3P20, FQT4N20L, FDD14AN06LF085, FQT4N25, FQT5P10, FQT7N10, FDB14AN06LF085, IRF740, FDP083N15A, FQU10N20C, FDP075N15A, FQU11P06, FQU12N20, FDPF085N10A, FQU13N06L, FQU13N10L

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