FQU10N20C Todos los transistores

 ..1. Size:723K  fairchild semi
 fqd10n20c fqu10n20c.pdf

January 2009 QFET FQD10N20C / FQU10N20C 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 7.8A, 200V, RDS(on) = 0.36 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 20 nC) planar stripe, DMOS technology. Low Crss ( typical 40.5 pF) This advanced technology has been espe

 ..2. Size:651K  onsemi
 fqd10n20c fqu10n20c.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 0.1. Size:853K  fairchild semi
 fqd10n20ctf fqd10n20ctm fqu10n20ctu.pdf

July 2013 FQD10N20C / FQU10N20C N-Channel QFET MOSFET 200 V, 7.8 A, 360 m Description Features This N-Channel enhancement mode power MOSFET is 7.8 A, 200 V, RDS(on) = 360 m (Max.)@ VGS = 10 V, produced using Fairchild Semiconductor s proprietary ID = 3.9 A planar stripe and DMOS technology. This advanced Low Gate Charge (Typ. 20 nC) MOSFET technology has been espe

 6.1. Size:778K  fairchild semi
 fqd10n20tf fqd10n20tm fqu10n20tu.pdf

April 2000 TM QFET QFET QFET QFET FQD10N20 / FQU10N20 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 7.6A, 200V, RDS(on) = 0.36 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 13.5 nC) planar stripe, DMOS technology. Low Crss ( typical 13 pF) This advanced technol

 6.2. Size:574K  fairchild semi
 fqd10n20ltf fqd10n20ltm fqu10n20ltu.pdf

December 2000 TM QFET QFET QFET QFET FQD10N20L / FQU10N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 7.6A, 200V, RDS(on) = 0.36 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 13 nC) planar stripe, DMOS technology. Low Crss ( typical 14 pF) This advanced

 6.3. Size:576K  fairchild semi
 fqd10n20l fqu10n20l.pdf

December 2000 TM QFET QFET QFET QFET FQD10N20L / FQU10N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 7.6A, 200V, RDS(on) = 0.36 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 13 nC) planar stripe, DMOS technology. Low Crss ( typical 14 pF) This advanced

 6.4. Size:239K  inchange semiconductor
 fqu10n20.pdf

isc N-Channel MOSFET Transistor FQU10N20 FEATURES Drain Source Voltage- V = 200V(Min) DSS Low On-Resistance R = 0.36 (Max) DS(on) 100% Avalanche Tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power factor correction Switched mode power supplies Uninterruptible Power Supply ABSOLUTE MAXIMUM RATINGS(T