All MOSFET. FQU10N20C Datasheet

 

FQU10N20C MOSFET. Datasheet pdf. Equivalent

Type Designator: FQU10N20C

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 50 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 7.8 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.36 Ohm

Package: TO251_IPAK

FQU10N20C Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQU10N20C Datasheet (PDF)

1.1. fqd10n20c fqu10n20c.pdf Size:723K _fairchild_semi

FQU10N20C
FQU10N20C

January 2009 QFET® FQD10N20C / FQU10N20C 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 7.8A, 200V, RDS(on) = 0.36? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 20 nC) planar stripe, DMOS technology. • Low Crss ( typical 40.5 pF) This advanced technology has been especially tailore

2.1. fqd10n20l fqu10n20l.pdf Size:576K _fairchild_semi

FQU10N20C
FQU10N20C

December 2000 TM QFET QFET QFET QFET FQD10N20L / FQU10N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 7.6A, 200V, RDS(on) = 0.36? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 13 nC) planar stripe, DMOS technology. • Low Crss ( typical 14 pF) This advanced technology i

 

Datasheet: FQT4N20L , FDD14AN06L_F085 , FQT4N25 , FQT5P10 , FQT7N10 , FDB14AN06L_F085 , FQT7N10L , FDP083N15A , IRF840 , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , FQU13N10L , FDB86102LZ , FQU17P06 .

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