DHS020N04 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DHS020N04 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 200 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 180 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 95.6 nS
Cossⓘ - Capacitancia de salida: 2180 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0021 Ohm
Encapsulados: TO220
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DHS020N04 datasheet
dhs020n04 dhs020n04f dhs020n04i dhs020n04e.pdf
DHS020N04/DHS020N04F/ DHS020N04I/DHS020N04E 180A 40V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 40V DSS advanced Splite gate technology design, provided excellent Rdson and low gate charge. Which accords with G R = 1.7m DS(on) (TYP) 1 the RoHS standard. 3 S I = 180A D 2 Features Fast switching Lo
dhs020n04p.pdf
DHS020N04P 170A 40V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 40V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 1.3m DS(on) (TYP) the RoHS standard. 1 3 S I = 170A D 2 Features Low on resistance Low gate charge Fast
dhs020n04b dhs020n04d.pdf
DHS020N04B/DHS020N04D 180A 40V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 40V DSS advanced Splite gate technology design, provided excellent Rdson and low gate charge. Which accords with G R = 1.7m DS(on) (TYP) 1 the RoHS standard. 3 S I = 180A D 2 Features Fast switching Low on resistance Lo
Otros transistores... DHIZ24B31, DHP035N04, DHP150N03, DHP50P04, DHS008N04P, DHS010N04U, DHS015N06, DHS015N06E, IRFB3607, DHS020N04B, DH081N03E, DH081N03F, DH081N03I, DH850N10I, DH85N08, DH90N045R, DH90N055R
Parámetros del MOSFET. Cómo se afectan entre sí.
History: AGM208D | SI7326DN | IRF8734PBF
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