Справочник MOSFET. DHS020N04

 

DHS020N04 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: DHS020N04
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 200 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 180 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 74.3 nC
   trⓘ - Время нарастания: 95.6 ns
   Cossⓘ - Выходная емкость: 2180 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0021 Ohm
   Тип корпуса: TO220
 

 Аналог (замена) для DHS020N04

   - подборⓘ MOSFET транзистора по параметрам

 

DHS020N04 Datasheet (PDF)

 ..1. Size:999K  cn wxdh
 dhs020n04 dhs020n04f dhs020n04i dhs020n04e.pdf pdf_icon

DHS020N04

DHS020N04/DHS020N04F/DHS020N04I/DHS020N04E180A 40V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 40VDSSadvanced Splite gate technology design, providedexcellent Rdson and low gate charge. Which accords with GR = 1.7mDS(on) (TYP)1the RoHS standard.3 SI = 180AD2 Features Fast switching Lo

 0.1. Size:879K  cn wxdh
 dhs020n04p.pdf pdf_icon

DHS020N04

DHS020N04P170A 40V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 40VDSSadvanced splite gate trench technology design, providedexcellent Rdson and low gate charge. Which accords withGR = 1.3mDS(on) (TYP)the RoHS standard.13 SI = 170AD2 Features Low on resistance Low gate charge Fast

 0.2. Size:810K  cn wxdh
 dhs020n04b dhs020n04d.pdf pdf_icon

DHS020N04

DHS020N04B/DHS020N04D180A 40V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 40VDSSadvanced Splite gate technology design, providedexcellent Rdson and low gate charge. Which accords with GR = 1.7mDS(on) (TYP)1the RoHS standard.3 SI = 180AD2 Features Fast switching Low on resistance Lo

 7.1. Size:977K  cn wxdh
 dhs020n88 dhs020n88e dhs020n88i.pdf pdf_icon

DHS020N04

DHS020N88/DHS020N88E/DHS020N88I180A 85V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets usedV = 85VDSSadvanced splite gate trench technology design, provided2 DR = 1.9mTO-220&TO-262DS(on) (TYP)excellent Rdson and low gate charge. Which accords withthe RoHS standard.R = 1.6mTO-263DS(on) (TYP)G1I

ПОКАЗАТЬ ЕЩЁ

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