FDP075N15A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDP075N15A
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 333 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 150 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 120 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0075 Ohm
Encapsulados: TO220
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FDP075N15A datasheet
fdp075n15a.pdf
December 2013 FDP075N15A / FDB075N15A N-Channel PowerTrench MOSFET 150 V, 130 A, 7.5 m Features Description RDS(on) = 6.25 m (Typ.) @ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using Fairchild Semicon- ductor s advanced PowerTrench process that has been tai- Fast Switching lored to minimize the on-state resistance while maintaining Low Gate Charge s
fdp075n15a f102 fdb075n15a.pdf
October 2012 FDP075N15A_F102 / FDB075N15A N-Channel PowerTrench MOSFET 150V, 130A, 7.5m Features Description RDS(on) = 6.25m ( Typ.)@ VGS = 10V, ID = 100A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that has Fast Switching been especially tailored to minimize the on-state resistance and yet maintain superior switc
fdp075n15a fdb075n15a.pdf
December 2013 FDP075N15A / FDB075N15A N-Channel PowerTrench MOSFET 150 V, 130 A, 7.5 m Features Description RDS(on) = 6.25 m (Typ.) @ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using Fairchild Semicon- ductor s advanced PowerTrench process that has been tai- Fast Switching lored to minimize the on-state resistance while maintaining Low Gate Charge s
fdp075n15a fdb075n15a.pdf
March 2015 FDP075N15A / FDB075N15A N-Channel PowerTrench MOSFET 150 V, 130 A, 7.5 m Features Description RDS(on) = 6.25 m (Typ.) @ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using Fairchild Semicon- ductor s advanced PowerTrench process that has been tai- Fast Switching lored to minimize the on-state resistance while maintaining Low Gate Charge
Otros transistores... FDD14AN06LF085 , FQT4N25 , FQT5P10 , FQT7N10 , FDB14AN06LF085 , FQT7N10L , FDP083N15A , FQU10N20C , IRF540N , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , FQU13N10L , FDB86102LZ , FQU17P06 , FQU1N60C .
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