Справочник MOSFET. FDP075N15A

 

FDP075N15A Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: FDP075N15A
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 333 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 150 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 120 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 100 nC
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0075 Ohm
   Тип корпуса: TO220
     - подбор MOSFET транзистора по параметрам

 

FDP075N15A Datasheet (PDF)

 ..1. Size:698K  fairchild semi
fdp075n15a.pdfpdf_icon

FDP075N15A

December 2013FDP075N15A / FDB075N15AN-Channel PowerTrench MOSFET150 V, 130 A, 7.5 mFeatures Description RDS(on) = 6.25 m (Typ.) @ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using Fairchild Semicon-ductors advanced PowerTrench process that has been tai- Fast Switchinglored to minimize the on-state resistance while maintaining Low Gate Charges

 ..2. Size:312K  fairchild semi
fdp075n15a f102 fdb075n15a.pdfpdf_icon

FDP075N15A

October 2012FDP075N15A_F102 / FDB075N15AN-Channel PowerTrench MOSFET 150V, 130A, 7.5mFeatures Description RDS(on) = 6.25m ( Typ.)@ VGS = 10V, ID = 100A This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process that has Fast Switching been especially tailored to minimize the on-state resistance and yet maintain superior switc

 ..3. Size:698K  fairchild semi
fdp075n15a fdb075n15a.pdfpdf_icon

FDP075N15A

December 2013FDP075N15A / FDB075N15AN-Channel PowerTrench MOSFET150 V, 130 A, 7.5 mFeatures Description RDS(on) = 6.25 m (Typ.) @ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using Fairchild Semicon-ductors advanced PowerTrench process that has been tai- Fast Switchinglored to minimize the on-state resistance while maintaining Low Gate Charges

 ..4. Size:821K  onsemi
fdp075n15a fdb075n15a.pdfpdf_icon

FDP075N15A

March 2015FDP075N15A / FDB075N15AN-Channel PowerTrench MOSFET150 V, 130 A, 7.5 mFeatures Description RDS(on) = 6.25 m (Typ.) @ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using Fairchild Semicon-ductors advanced PowerTrench process that has been tai- Fast Switchinglored to minimize the on-state resistance while maintaining Low Gate Charge

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History: FQU2N100 | 2SK3568

 

 
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