FDP075N15A. Аналоги и основные параметры
Наименование производителя: FDP075N15A
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 333 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 150 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 120 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0075 Ohm
Тип корпуса: TO220
Аналог (замена) для FDP075N15A
- подборⓘ MOSFET транзистора по параметрам
FDP075N15A даташит
fdp075n15a.pdf
December 2013 FDP075N15A / FDB075N15A N-Channel PowerTrench MOSFET 150 V, 130 A, 7.5 m Features Description RDS(on) = 6.25 m (Typ.) @ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using Fairchild Semicon- ductor s advanced PowerTrench process that has been tai- Fast Switching lored to minimize the on-state resistance while maintaining Low Gate Charge s
fdp075n15a f102 fdb075n15a.pdf
October 2012 FDP075N15A_F102 / FDB075N15A N-Channel PowerTrench MOSFET 150V, 130A, 7.5m Features Description RDS(on) = 6.25m ( Typ.)@ VGS = 10V, ID = 100A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that has Fast Switching been especially tailored to minimize the on-state resistance and yet maintain superior switc
fdp075n15a fdb075n15a.pdf
December 2013 FDP075N15A / FDB075N15A N-Channel PowerTrench MOSFET 150 V, 130 A, 7.5 m Features Description RDS(on) = 6.25 m (Typ.) @ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using Fairchild Semicon- ductor s advanced PowerTrench process that has been tai- Fast Switching lored to minimize the on-state resistance while maintaining Low Gate Charge s
fdp075n15a fdb075n15a.pdf
March 2015 FDP075N15A / FDB075N15A N-Channel PowerTrench MOSFET 150 V, 130 A, 7.5 m Features Description RDS(on) = 6.25 m (Typ.) @ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using Fairchild Semicon- ductor s advanced PowerTrench process that has been tai- Fast Switching lored to minimize the on-state resistance while maintaining Low Gate Charge
Другие MOSFET... FDD14AN06LF085 , FQT4N25 , FQT5P10 , FQT7N10 , FDB14AN06LF085 , FQT7N10L , FDP083N15A , FQU10N20C , IRF540N , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , FQU13N10L , FDB86102LZ , FQU17P06 , FQU1N60C .
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