DHI50N06FZC Todos los transistores

 

DHI50N06FZC MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DHI50N06FZC
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 143 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 50 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 82 nS
   Cossⓘ - Capacitancia de salida: 608 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.022 Ohm
   Paquete / Cubierta: TO262
 

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DHI50N06FZC Datasheet (PDF)

 ..1. Size:1704K  cn wxdh
 dh50n06fzc dhf50n06fzc dhi50n06fzc dhe50n06fzc dhb50n06fzc dhd50n06fzc.pdf pdf_icon

DHI50N06FZC

DH50N06FZC/DHF50N06FZC/DHI50N06FZC/DHE50N06FZC/DHB50N06FZC/DHD50N06FZC50A 60V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel Enhanced VDMOSFETs Used2 DVDSS = 60Vadvanced trench technology design, provided excellentRDSON and low gate charge. Which accords with theRDS = 18m(on) (TYP)GRoHS standard.1ID = 50A3 S2 Features Fast Switching

 8.1. Size:1399K  cn wxdh
 dh50n15 dhf50n15 dhi50n15 dhe50n15.pdf pdf_icon

DHI50N06FZC

DH50N15/DHF50N15/DHI50N15/DHE50N1550A 150V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets. used2 DV = 150VDSSadvanced trench process technology design, providedexcellent Rdson and low gate charge. Which accords with theR = 18mDS(on) (Type)GRoHS standard.1I = 50A3 S D2 Features Low on resistance Low

Otros transistores... DHI029N08 , DHI035N04 , DHI100N03B13 , DHI10H035R , DHI10H037R , DHI16N06 , DHI3205A , DHI3N90 , IRF540N , DHI50N15 , DHI8004 , DHI80N08B22 , DHI8290 , DHI85N08 , DHD8290 , DHD90N03B17 , DHD50N06FZC .

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