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DHI50N06FZC Spec and Replacement


   Type Designator: DHI50N06FZC
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 143 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 82 nS
   Cossⓘ - Output Capacitance: 608 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: TO262

 DHI50N06FZC Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

DHI50N06FZC Specs

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 dh50n06fzc dhf50n06fzc dhi50n06fzc dhe50n06fzc dhb50n06fzc dhd50n06fzc.pdf pdf_icon

DHI50N06FZC

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 8.1. Size:1399K  cn wxdh
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DHI50N06FZC

DH50N15/DHF50N15/ DHI50N15/DHE50N15 50A 150V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets. used 2 D V = 150V DSS advanced trench process technology design, provided excellent Rdson and low gate charge. Which accords with the R = 18m DS(on) (Type) G RoHS standard. 1 I = 50A 3 S D 2 Features Low on resistance Low... See More ⇒

Detailed specifications: DHI029N08 , DHI035N04 , DHI100N03B13 , DHI10H035R , DHI10H037R , DHI16N06 , DHI3205A , DHI3N90 , IRF540 , DHI50N15 , DHI8004 , DHI80N08B22 , DHI8290 , DHI85N08 , DHD8290 , DHD90N03B17 , DHD50N06FZC .

History: DHI80N08B22 | DHD90N045R

Keywords - DHI50N06FZC MOSFET specs

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