DHI8004 Todos los transistores

 

DHI8004 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DHI8004
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 245 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 180 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 18 nS
   Cossⓘ - Capacitancia de salida: 1030 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.004 Ohm
   Paquete / Cubierta: TO262

 Búsqueda de reemplazo de MOSFET DHI8004

 

Principales características: DHI8004

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DHI8004

DH8004/DHI8004/DHE8004/ DH8004D/DH8004B 180A 80V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used advanced trench technology design, provided excellent 2 D Rdson and low gate charge. Which accords with the RoHS V = 80V DSS standard. G R = 2.8m DS(on) (Type) 1 2 Features 3 S I = 180A D Fast switching Low on resi

 9.1. Size:1310K  cn wxdh
 dh80n08b22 dhf80n08b22 dhi80n08b22 dhe80n08b22 dhb80n08b22 dhd80n08b22.pdf pdf_icon

DHI8004

DH80N08B22/DHF80N08B22/DHI80N08B22/ DHE80N08B22/DHB80N08B22/DHD80N08B22 80A 80V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 80V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS R = 6.5m DS(on) (Type) G standard. 1 I = 80A 3 S D 2 Features

Otros transistores... DHI100N03B13 , DHI10H035R , DHI10H037R , DHI16N06 , DHI3205A , DHI3N90 , DHI50N06FZC , DHI50N15 , IRFP460 , DHI80N08B22 , DHI8290 , DHI85N08 , DHD8290 , DHD90N03B17 , DHD50N06FZC , DHD80N08B22 , DHD90N045R .

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