All MOSFET. DHI8004 Datasheet

 

DHI8004 Datasheet and Replacement


   Type Designator: DHI8004
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 245 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 180 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 1030 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
   Package: TO262
 
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DHI8004 Datasheet (PDF)

 ..1. Size:1237K  cn wxdh
 dh8004 dhi8004 dhe8004 dh8004d dh8004b.pdf pdf_icon

DHI8004

DH8004/DHI8004/DHE8004/DH8004D/DH8004B180A 80V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets usedadvanced trench technology design, provided excellent2 DRdson and low gate charge. Which accords with the RoHSV = 80VDSSstandard.G R = 2.8mDS(on) (Type)12 Features3 S I = 180AD Fast switching Low on resi

 9.1. Size:1310K  cn wxdh
 dh80n08b22 dhf80n08b22 dhi80n08b22 dhe80n08b22 dhb80n08b22 dhd80n08b22.pdf pdf_icon

DHI8004

DH80N08B22/DHF80N08B22/DHI80N08B22/DHE80N08B22/DHB80N08B22/DHD80N08B2280A 80V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 80VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSR = 6.5mDS(on) (Type)Gstandard.1I = 80A3 S D2 Features

Datasheet: DHI100N03B13 , DHI10H035R , DHI10H037R , DHI16N06 , DHI3205A , DHI3N90 , DHI50N06FZC , DHI50N15 , IRF640 , DHI80N08B22 , DHI8290 , DHI85N08 , DHD8290 , DHD90N03B17 , DHD50N06FZC , DHD80N08B22 , DHD90N045R .

Keywords - DHI8004 MOSFET datasheet

 DHI8004 cross reference
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