DHI8004 Datasheet. Specs and Replacement

Type Designator: DHI8004  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 245 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 180 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 1030 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm

Package: TO262

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DHI8004 datasheet

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 dh8004 dhi8004 dhe8004 dh8004d dh8004b.pdf pdf_icon

DHI8004

DH8004/DHI8004/DHE8004/ DH8004D/DH8004B 180A 80V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used advanced trench technology design, provided excellent 2 D Rdson and low gate charge. Which accords with the RoHS V = 80V DSS standard. G R = 2.8m DS(on) (Type) 1 2 Features 3 S I = 180A D Fast switching Low on resi... See More ⇒

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 dh80n08b22 dhf80n08b22 dhi80n08b22 dhe80n08b22 dhb80n08b22 dhd80n08b22.pdf pdf_icon

DHI8004

DH80N08B22/DHF80N08B22/DHI80N08B22/ DHE80N08B22/DHB80N08B22/DHD80N08B22 80A 80V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 80V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS R = 6.5m DS(on) (Type) G standard. 1 I = 80A 3 S D 2 Features ... See More ⇒

Detailed specifications: DHI100N03B13, DHI10H035R, DHI10H037R, DHI16N06, DHI3205A, DHI3N90, DHI50N06FZC, DHI50N15, 50N06, DHI80N08B22, DHI8290, DHI85N08, DHD8290, DHD90N03B17, DHD50N06FZC, DHD80N08B22, DHD90N045R

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