FDB86102LZ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

May 2011FDB86102LZN-Channel PowerTrench MOSFET 100 V, 30 A, 24 mFeatures General Description Max rDS(on) = 24 m at VGS = 10 V, ID = 8.3 AThis N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process that has Max rDS(on) = 35 m at VGS = 4.5 V, ID = 6.8 A been especially tailored to minimize the on-state resistance and switching los

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

May 2013FDB86135N-Channel Shielded Gate PowerTrench MOSFET 100V, 176A, 3.5mFeatures General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process that Max RDS(on) = 3.5m at VGS = 10V, ID = 75Aincorporates Shielded Gate technology. This process has been optimized for the on-state

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

December 2014FDB86366_F085N-Channel PowerTrench MOSFET80 V, 110 A, 3.6 m Features Typical RDS(on) = 2.8 m at VGS = 10V, ID = 80 A DD Typical Qg(tot) = 86 nC at VGS = 10V, ID = 80 A UIS Capability RoHS Compliant Qualified to AEC Q101GApplications GS Automotive Engine ControlTO-263S PowerTrain ManagementFDB SERIES Solenoid and Motor Drivers In

January 2014FDB86360_F085N-Channel Power Trench MOSFETDD80V, 110A, 1.8m Features Typ rDS(on) = 1.5m at VGS = 10V, ID = 80A G Typ Qg(tot) = 207nC at VGS = 10V, ID = 80AGS UIS Capability RoHS CompliantTO-263S Qualified to AEC Q101FDB SERIESApplications Forcurrentpackagedrawing,pleaserefertotheFairchildwebsiteatwww.fairchildsemi.c

December 2014FDB86563_F085N-Channel PowerTrench MOSFET60 V, 110 A, 1.8 m Features Typical RDS(on) = 1.6 m at VGS = 10V, ID = 80 A DD Typical Qg(tot) = 126 nC at VGS = 10V, ID = 80 A UIS Capability RoHS Compliant Qualified to AEC Q101GApplications GS Automotive Engine ControlTO-263S PowerTrain ManagementFDB SERIES Solenoid and Motor Drivers

June 2014FDB86363_F085N-Channel PowerTrench MOSFETDD80 V, 110 A, 2.4 m Features Typical RDS(on) = 2.0 m at VGS = 10V, ID = 80 A G Typical Qg(tot) = 131 nC at VGS = 10V, ID = 80 A UIS Capability GS RoHS CompliantTO-263S Qualified to AEC Q101FDB SERIESApplications Forcurrentpackagedrawing,pleaserefertotheFairchild Automotive Engine Co

FDB86566-F085DDN-Channel PowerTrench MOSFET 60 V, 110 A, 2.7 mGFeaturesGS Typical RDS(on) = 2.2 m at VGS = 10V, ID = 80 A Typical Qg(tot) = 80 nC at VGS = 10V, ID = 80 ATO-263S UIS CapabilityFDB SERIES RoHS Compliant Qualified to AEC Q101Applications Automotive Engine Control PowerTrain Management Solenoid and Motor Drivers Integrated Starter/

MOSFET N-Channel,POWERTRENCH)60 V, 80 A, 5.6 mWFDB86569-F085Featureswww.onsemi.com Typical RDS(on) = 4.4 mW at VGS = 10 V, ID = 80 A Typical Qg(tot) = 35 nC at VGS = 10 V, ID = 80 AD UIS Capability These Device is Pb-Free and is RoHS Compliant Qualified to AEC-Q101GApplications Automotive Engine ControlS PowerTrain ManagementD2PAK-3

FDB86360-F085N-Channel Power Trench MOSFET80V, 110A, 1.8mFeatures Typ rDS(on) = 1.5m at VGS = 10V, ID = 80AG Typ Qg(tot) = 207nC at VGS = 10V, ID = 80AGS UIS Capability RoHS CompliantTO-263S Qualified to AEC Q101FDB SERIESApplications Automotive Engine Control Powertrain Management Solenoid and Motor Drivers Integrated Starter/alternator Primar

FDB86563-F085N-Channel PowerTrench MOSFET 60 V, 110 A, 1.8 mDDFeatures Typical RDS(on) = 1.6 m at VGS = 10V, ID = 80 A Typical Qg(tot) = 126 nC at VGS = 10V, ID = 80 A UIS CapabilityG RoHS CompliantGS Qualified to AEC Q101TO-263SApplicationsFDB SERIES Automotive Engine Control PowerTrain Management Solenoid and Motor Drivers Integrated Starter

FDB86366-F085N-Channel PowerTrench MOSFET 80 V, 110 A, 3.6 mFeatures Typical RDS(on) = 2.8 m at VGS = 10V, ID = 80 ADD Typical Qg(tot) = 86 nC at VGS = 10V, ID = 80 A UIS Capability RoHS Compliant Qualified to AEC Q101GApplicationsGS Automotive Engine Control PowerTrain Management TO-263SFDB SERIES Solenoid and Motor Drivers Integrated Starter/A

MOSFET - POWERTRENCH),N-Channel80 V, 110 A, 2.4 mWFDB86363-F085Features Typical RDS(on) = 2.0 mW at VGS = 10 V, ID = 80 Awww.onsemi.com Typical Qg(tot) = 131 nC at VGS = 10 V, ID = 80 A UIS CapabilityN-Channel AEC-Q101 Qualified and PPAP Capable(Pin 2) This Device is Pb-Free, Halide Free and is RoHS CompliantDApplications Automotive Engine Control