FDB86102LZ MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDB86102LZ
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 75 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 30 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.024 Ohm
Encapsulados: TO263
D2PAK
Búsqueda de reemplazo de FDB86102LZ MOSFET
- Selecciónⓘ de transistores por parámetros
FDB86102LZ datasheet
..1. Size:249K fairchild semi
fdb86102lz.pdf 
May 2011 FDB86102LZ N-Channel PowerTrench MOSFET 100 V, 30 A, 24 m Features General Description Max rDS(on) = 24 m at VGS = 10 V, ID = 8.3 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that has Max rDS(on) = 35 m at VGS = 4.5 V, ID = 6.8 A been especially tailored to minimize the on-state resistance and switching los
..2. Size:351K onsemi
fdb86102lz.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
8.1. Size:241K fairchild semi
fdb86135.pdf
May 2013 FDB86135 N-Channel Shielded Gate PowerTrench MOSFET 100V, 176A, 3.5m Features General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that Max RDS(on) = 3.5m at VGS = 10V, ID = 75A incorporates Shielded Gate technology. This process has been optimized for the on-state
8.2. Size:357K onsemi
fdb86135.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
9.1. Size:465K fairchild semi
fdb86366 f085.pdf
December 2014 FDB86366_F085 N-Channel PowerTrench MOSFET 80 V, 110 A, 3.6 m Features Typical RDS(on) = 2.8 m at VGS = 10V, ID = 80 A D D Typical Qg(tot) = 86 nC at VGS = 10V, ID = 80 A UIS Capability RoHS Compliant Qualified to AEC Q101 G Applications G S Automotive Engine Control TO-263 S PowerTrain Management FDB SERIES Solenoid and Motor Drivers In
9.2. Size:365K fairchild semi
fdb86360 f085.pdf
January 2014 FDB86360_F085 N-Channel Power Trench MOSFET D D 80V, 110A, 1.8m Features Typ rDS(on) = 1.5m at VGS = 10V, ID = 80A G Typ Qg(tot) = 207nC at VGS = 10V, ID = 80A G S UIS Capability RoHS Compliant TO-263 S Qualified to AEC Q101 FDB SERIES Applications For current package drawing, please refer to the Fairchild website at www.fairchildsemi.c
9.3. Size:468K fairchild semi
fdb86563 f085.pdf
December 2014 FDB86563_F085 N-Channel PowerTrench MOSFET 60 V, 110 A, 1.8 m Features Typical RDS(on) = 1.6 m at VGS = 10V, ID = 80 A D D Typical Qg(tot) = 126 nC at VGS = 10V, ID = 80 A UIS Capability RoHS Compliant Qualified to AEC Q101 G Applications G S Automotive Engine Control TO-263 S PowerTrain Management FDB SERIES Solenoid and Motor Drivers
9.4. Size:486K fairchild semi
fdb86363 f085.pdf
June 2014 FDB86363_F085 N-Channel PowerTrench MOSFET D D 80 V, 110 A, 2.4 m Features Typical RDS(on) = 2.0 m at VGS = 10V, ID = 80 A G Typical Qg(tot) = 131 nC at VGS = 10V, ID = 80 A UIS Capability G S RoHS Compliant TO-263 S Qualified to AEC Q101 FDB SERIES Applications For current package drawing, please refer to the Fairchild Automotive Engine Co
9.5. Size:440K onsemi
fdb86566-f085.pdf
FDB86566-F085 D D N-Channel PowerTrench MOSFET 60 V, 110 A, 2.7 m G Features G S Typical RDS(on) = 2.2 m at VGS = 10V, ID = 80 A Typical Qg(tot) = 80 nC at VGS = 10V, ID = 80 A TO-263 S UIS Capability FDB SERIES RoHS Compliant Qualified to AEC Q101 Applications Automotive Engine Control PowerTrain Management Solenoid and Motor Drivers Integrated Starter/
9.7. Size:615K onsemi
fdb86360-f085.pdf
FDB86360-F085 N-Channel Power Trench MOSFET 80V, 110A, 1.8m Features Typ rDS(on) = 1.5m at VGS = 10V, ID = 80A G Typ Qg(tot) = 207nC at VGS = 10V, ID = 80A G S UIS Capability RoHS Compliant TO-263 S Qualified to AEC Q101 FDB SERIES Applications Automotive Engine Control Powertrain Management Solenoid and Motor Drivers Integrated Starter/alternator Primar
9.8. Size:451K onsemi
fdb86563-f085.pdf
FDB86563-F085 N-Channel PowerTrench MOSFET 60 V, 110 A, 1.8 m D D Features Typical RDS(on) = 1.6 m at VGS = 10V, ID = 80 A Typical Qg(tot) = 126 nC at VGS = 10V, ID = 80 A UIS Capability G RoHS Compliant G S Qualified to AEC Q101 TO-263 S Applications FDB SERIES Automotive Engine Control PowerTrain Management Solenoid and Motor Drivers Integrated Starter
9.9. Size:436K onsemi
fdb86366-f085.pdf
FDB86366-F085 N-Channel PowerTrench MOSFET 80 V, 110 A, 3.6 m Features Typical RDS(on) = 2.8 m at VGS = 10V, ID = 80 A D D Typical Qg(tot) = 86 nC at VGS = 10V, ID = 80 A UIS Capability RoHS Compliant Qualified to AEC Q101 G Applications G S Automotive Engine Control PowerTrain Management TO-263 S FDB SERIES Solenoid and Motor Drivers Integrated Starter/A
9.10. Size:265K onsemi
fdb86363-f085.pdf
MOSFET - POWERTRENCH), N-Channel 80 V, 110 A, 2.4 mW FDB86363-F085 Features Typical RDS(on) = 2.0 mW at VGS = 10 V, ID = 80 A www.onsemi.com Typical Qg(tot) = 131 nC at VGS = 10 V, ID = 80 A UIS Capability N-Channel AEC-Q101 Qualified and PPAP Capable (Pin 2) This Device is Pb-Free, Halide Free and is RoHS Compliant D Applications Automotive Engine Control
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.
