FDB86102LZ Datasheet PDF and Equivalents Search

 ..1. Size:249K  fairchild semi
 fdb86102lz.pdf

May 2011 FDB86102LZ N-Channel PowerTrench MOSFET 100 V, 30 A, 24 m Features General Description Max rDS(on) = 24 m at VGS = 10 V, ID = 8.3 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that has Max rDS(on) = 35 m at VGS = 4.5 V, ID = 6.8 A been especially tailored to minimize the on-state resistance and switching los... See More ⇒

 ..2. Size:351K  onsemi
 fdb86102lz.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 8.1. Size:241K  fairchild semi
 fdb86135.pdf

May 2013 FDB86135 N-Channel Shielded Gate PowerTrench MOSFET 100V, 176A, 3.5m Features General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that Max RDS(on) = 3.5m at VGS = 10V, ID = 75A incorporates Shielded Gate technology. This process has been optimized for the on-state... See More ⇒

 8.2. Size:357K  onsemi
 fdb86135.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 9.1. Size:465K  fairchild semi
 fdb86366 f085.pdf

December 2014 FDB86366_F085 N-Channel PowerTrench MOSFET 80 V, 110 A, 3.6 m Features Typical RDS(on) = 2.8 m at VGS = 10V, ID = 80 A D D Typical Qg(tot) = 86 nC at VGS = 10V, ID = 80 A UIS Capability RoHS Compliant Qualified to AEC Q101 G Applications G S Automotive Engine Control TO-263 S PowerTrain Management FDB SERIES Solenoid and Motor Drivers In... See More ⇒

 9.2. Size:365K  fairchild semi
 fdb86360 f085.pdf

January 2014 FDB86360_F085 N-Channel Power Trench MOSFET D D 80V, 110A, 1.8m Features Typ rDS(on) = 1.5m at VGS = 10V, ID = 80A G Typ Qg(tot) = 207nC at VGS = 10V, ID = 80A G S UIS Capability RoHS Compliant TO-263 S Qualified to AEC Q101 FDB SERIES Applications For current package drawing, please refer to the Fairchild website at www.fairchildsemi.c... See More ⇒

 9.3. Size:468K  fairchild semi
 fdb86563 f085.pdf

December 2014 FDB86563_F085 N-Channel PowerTrench MOSFET 60 V, 110 A, 1.8 m Features Typical RDS(on) = 1.6 m at VGS = 10V, ID = 80 A D D Typical Qg(tot) = 126 nC at VGS = 10V, ID = 80 A UIS Capability RoHS Compliant Qualified to AEC Q101 G Applications G S Automotive Engine Control TO-263 S PowerTrain Management FDB SERIES Solenoid and Motor Drivers ... See More ⇒

 9.4. Size:486K  fairchild semi
 fdb86363 f085.pdf

June 2014 FDB86363_F085 N-Channel PowerTrench MOSFET D D 80 V, 110 A, 2.4 m Features Typical RDS(on) = 2.0 m at VGS = 10V, ID = 80 A G Typical Qg(tot) = 131 nC at VGS = 10V, ID = 80 A UIS Capability G S RoHS Compliant TO-263 S Qualified to AEC Q101 FDB SERIES Applications For current package drawing, please refer to the Fairchild Automotive Engine Co... See More ⇒

 9.5. Size:440K  onsemi
 fdb86566-f085.pdf

FDB86566-F085 D D N-Channel PowerTrench MOSFET 60 V, 110 A, 2.7 m G Features G S Typical RDS(on) = 2.2 m at VGS = 10V, ID = 80 A Typical Qg(tot) = 80 nC at VGS = 10V, ID = 80 A TO-263 S UIS Capability FDB SERIES RoHS Compliant Qualified to AEC Q101 Applications Automotive Engine Control PowerTrain Management Solenoid and Motor Drivers Integrated Starter/... See More ⇒

 9.6. Size:4057K  onsemi
 fdb86569-f085.pdf

... See More ⇒

 9.7. Size:615K  onsemi
 fdb86360-f085.pdf

FDB86360-F085 N-Channel Power Trench MOSFET 80V, 110A, 1.8m Features Typ rDS(on) = 1.5m at VGS = 10V, ID = 80A G Typ Qg(tot) = 207nC at VGS = 10V, ID = 80A G S UIS Capability RoHS Compliant TO-263 S Qualified to AEC Q101 FDB SERIES Applications Automotive Engine Control Powertrain Management Solenoid and Motor Drivers Integrated Starter/alternator Primar... See More ⇒

 9.8. Size:451K  onsemi
 fdb86563-f085.pdf

FDB86563-F085 N-Channel PowerTrench MOSFET 60 V, 110 A, 1.8 m D D Features Typical RDS(on) = 1.6 m at VGS = 10V, ID = 80 A Typical Qg(tot) = 126 nC at VGS = 10V, ID = 80 A UIS Capability G RoHS Compliant G S Qualified to AEC Q101 TO-263 S Applications FDB SERIES Automotive Engine Control PowerTrain Management Solenoid and Motor Drivers Integrated Starter... See More ⇒

 9.9. Size:436K  onsemi
 fdb86366-f085.pdf

FDB86366-F085 N-Channel PowerTrench MOSFET 80 V, 110 A, 3.6 m Features Typical RDS(on) = 2.8 m at VGS = 10V, ID = 80 A D D Typical Qg(tot) = 86 nC at VGS = 10V, ID = 80 A UIS Capability RoHS Compliant Qualified to AEC Q101 G Applications G S Automotive Engine Control PowerTrain Management TO-263 S FDB SERIES Solenoid and Motor Drivers Integrated Starter/A... See More ⇒

 9.10. Size:265K  onsemi
 fdb86363-f085.pdf

MOSFET - POWERTRENCH), N-Channel 80 V, 110 A, 2.4 mW FDB86363-F085 Features Typical RDS(on) = 2.0 mW at VGS = 10 V, ID = 80 A www.onsemi.com Typical Qg(tot) = 131 nC at VGS = 10 V, ID = 80 A UIS Capability N-Channel AEC-Q101 Qualified and PPAP Capable (Pin 2) This Device is Pb-Free, Halide Free and is RoHS Compliant D Applications Automotive Engine Control... See More ⇒