All MOSFET. FDB86102LZ Datasheet

 

FDB86102LZ MOSFET. Datasheet pdf. Equivalent

Type Designator: FDB86102LZ

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 75 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V

Maximum Drain Current |Id|: 30 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.024 Ohm

Package: TO263_D2PAK

FDB86102LZ Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDB86102LZ Datasheet (PDF)

1.1. fdb86102lz.pdf Size:249K _fairchild_semi

FDB86102LZ
FDB86102LZ

May 2011 FDB86102LZ N-Channel PowerTrench® MOSFET 100 V, 30 A, 24 mΩ Features General Description Max rDS(on) = 24 mΩ at VGS = 10 V, ID = 8.3 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has Max rDS(on) = 35 mΩ at VGS = 4.5 V, ID = 6.8 A been especially tailored to minimize the on-state resistance and switching los

4.1. fdb86135.pdf Size:241K _fairchild_semi

FDB86102LZ
FDB86102LZ

May 2013 FDB86135 N-Channel Shielded Gate PowerTrench® MOSFET 100V, 176A, 3.5mΩ Features General Description • Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that • Max RDS(on) = 3.5mΩ at VGS = 10V, ID = 75A incorporates Shielded Gate technology. This process has been optimized for the on-state

 5.1. fdb86360 f085.pdf Size:365K _fairchild_semi

FDB86102LZ
FDB86102LZ

January 2014 FDB86360_F085 N-Channel Power Trench® MOSFET D D 80V, 110A, 1.8mΩ Features Typ rDS(on) = 1.5mΩ at VGS = 10V, ID = 80A G Typ Qg(tot) = 207nC at VGS = 10V, ID = 80A G S UIS Capability RoHS Compliant TO-263 S Qualified to AEC Q101 FDB SERIES Applications For current package drawing, please refer to the Fairchild  website at www.fairchildsemi.c

5.2. fdb86363 f085.pdf Size:486K _fairchild_semi

FDB86102LZ
FDB86102LZ

June 2014 FDB86363_F085 N-Channel PowerTrench® MOSFET D D 80 V, 110 A, 2.4 mΩ Features Typical RDS(on) = 2.0 mΩ at VGS = 10V, ID = 80 A G Typical Qg(tot) = 131 nC at VGS = 10V, ID = 80 A UIS Capability G S RoHS Compliant TO-263 S Qualified to AEC Q101 FDB SERIES Applications For current package drawing, please refer to the Fairchild  Automotive Engine Co

 5.3. fdb86366 f085.pdf Size:465K _fairchild_semi

FDB86102LZ
FDB86102LZ

December 2014 FDB86366_F085 N-Channel PowerTrench® MOSFET 80 V, 110 A, 3.6 mΩ Features Typical RDS(on) = 2.8 mΩ at VGS = 10V, ID = 80 A D D Typical Qg(tot) = 86 nC at VGS = 10V, ID = 80 A UIS Capability RoHS Compliant Qualified to AEC Q101 G Applications G S Automotive Engine Control TO-263 S PowerTrain Management FDB SERIES Solenoid and Motor Drivers In

Datasheet: FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , FQU13N10L , IRFP460 , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 , FQU2N90TU_AM002 .

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