DHD80N08B22 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: DHD80N08B22  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 145 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 80 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 80 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 115 nS

Cossⓘ - Capacitancia de salida: 292 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.008 Ohm

Encapsulados: TO251

  📄📄 Copiar 

 Búsqueda de reemplazo de DHD80N08B22 MOSFET

- Selecciónⓘ de transistores por parámetros

 

DHD80N08B22 datasheet

 ..1. Size:1310K  cn wxdh
dh80n08b22 dhf80n08b22 dhi80n08b22 dhe80n08b22 dhb80n08b22 dhd80n08b22.pdf pdf_icon

DHD80N08B22

DH80N08B22/DHF80N08B22/DHI80N08B22/ DHE80N08B22/DHB80N08B22/DHD80N08B22 80A 80V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 80V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS R = 6.5m DS(on) (Type) G standard. 1 I = 80A 3 S D 2 Features

 6.1. Size:884K  cn wxdh
dhd80n08.pdf pdf_icon

DHD80N08B22

DHD80N08 90A 80V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 80V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS R = 6.5m DS(on) (Type) G standard. 1 I = 90A 3 S D 2 Features Fast switching High avalanche current Low on resistanc

 7.1. Size:970K  cn wxdh
dhd80n03.pdf pdf_icon

DHD80N08B22

DHD80N03 40A 30V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 30V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS G R = 5.2m DS(on) (TYP) standard. 1 3 S I Silicon limit = 76A D 2 Features I Package limit 40A = D Low on resis

Otros transistores... DHI50N15, DHI8004, DHI80N08B22, DHI8290, DHI85N08, DHD8290, DHD90N03B17, DHD50N06FZC, IRFP260N, DHD90N045R, DHS025N06, DHS025N06E, DHS025N10, DHS025N10B, DHS025N10D, DHS025N10E, DHS025N10U