DHD80N08B22 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DHD80N08B22 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 145 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 80 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 80 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 115 nS
Cossⓘ - Capacitancia de salida: 292 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.008 Ohm
Encapsulados: TO251
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DHD80N08B22 datasheet
dh80n08b22 dhf80n08b22 dhi80n08b22 dhe80n08b22 dhb80n08b22 dhd80n08b22.pdf
DH80N08B22/DHF80N08B22/DHI80N08B22/ DHE80N08B22/DHB80N08B22/DHD80N08B22 80A 80V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 80V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS R = 6.5m DS(on) (Type) G standard. 1 I = 80A 3 S D 2 Features
dhd80n08.pdf
DHD80N08 90A 80V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 80V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS R = 6.5m DS(on) (Type) G standard. 1 I = 90A 3 S D 2 Features Fast switching High avalanche current Low on resistanc
dhd80n03.pdf
DHD80N03 40A 30V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 30V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS G R = 5.2m DS(on) (TYP) standard. 1 3 S I Silicon limit = 76A D 2 Features I Package limit 40A = D Low on resis
Otros transistores... DHI50N15, DHI8004, DHI80N08B22, DHI8290, DHI85N08, DHD8290, DHD90N03B17, DHD50N06FZC, IRFP260N, DHD90N045R, DHS025N06, DHS025N06E, DHS025N10, DHS025N10B, DHS025N10D, DHS025N10E, DHS025N10U
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