DHD80N08B22 Todos los transistores

 

DHD80N08B22 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DHD80N08B22
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 145 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 80 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 115 nS
   Cossⓘ - Capacitancia de salida: 292 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.008 Ohm
   Paquete / Cubierta: TO251
 

 Búsqueda de reemplazo de DHD80N08B22 MOSFET

   - Selección ⓘ de transistores por parámetros

 

DHD80N08B22 Datasheet (PDF)

 ..1. Size:1310K  cn wxdh
 dh80n08b22 dhf80n08b22 dhi80n08b22 dhe80n08b22 dhb80n08b22 dhd80n08b22.pdf pdf_icon

DHD80N08B22

DH80N08B22/DHF80N08B22/DHI80N08B22/DHE80N08B22/DHB80N08B22/DHD80N08B2280A 80V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 80VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSR = 6.5mDS(on) (Type)Gstandard.1I = 80A3 S D2 Features

 6.1. Size:884K  cn wxdh
 dhd80n08.pdf pdf_icon

DHD80N08B22

DHD80N0890A 80V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 80VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSR = 6.5mDS(on) (Type)Gstandard.1I = 90A3 S D2 Features Fast switching High avalanche current Low on resistanc

 7.1. Size:970K  cn wxdh
 dhd80n03.pdf pdf_icon

DHD80N08B22

DHD80N0340A 30V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 30VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 5.2mDS(on) (TYP)standard.13 SI Silicon limit= 76AD2 FeaturesI Package limit 40A=D Low on resis

Otros transistores... DHI50N15 , DHI8004 , DHI80N08B22 , DHI8290 , DHI85N08 , DHD8290 , DHD90N03B17 , DHD50N06FZC , 10N60 , DHD90N045R , DHS025N06 , DHS025N06E , DHS025N10 , DHS025N10B , DHS025N10D , DHS025N10E , DHS025N10U .

 

 
Back to Top

 


DHD80N08B22   DHD80N08B22   DHD80N08B22  

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: MPF20N50 | MPF18N20 | MPF13N50 | MPF12N65 | MP9N20 | MP70N10 | MP5N65 | MP50N06 | MP40N20 | MP3205B | MP20N40P | MP18N20 | MP180N06P | MP150N08P | MP11P20 | MLS65R580D

 

 

 
Back to Top

 

Popular searches

2sc945 | irfp250n | irf9540n | bd139 datasheet | irf9640 | 2n3053 | a1015 | mpsa42

 


 
.