FQU17P06 Todos los transistores

 ..1. Size:721K  fairchild semi
 fqd17p06 fqu17p06.pdf

January 2009 QFET FQD17P06 / FQU17P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -12A, -60V, RDS(on) = 0.135 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 21 nC) planar stripe, DMOS technology. Low Crss ( typical 80 pF) This advanced technology has been especia

 ..2. Size:2286K  cn vbsemi
 fqu17p06.pdf

FQU17P06 www.VBsemi.tw P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) 100 % UIS Tested 0.066 at VGS = - 10 V - 20 APPLICATIONS - 60 40 nC at VGS = - 4.5 V - 18 0.080 Load Switch TO-251 S G D P-Channel MOSFET G D S Top View ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted) Par

 0.1. Size:804K  fairchild semi
 fqd17p06tf fqd17p06tm fqu17p06tu.pdf

January 2009 QFET FQD17P06 / FQU17P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -12A, -60V, RDS(on) = 0.135 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 21 nC) planar stripe, DMOS technology. Low Crss ( typical 80 pF) This advanced technology has been especia

 9.1. Size:555K  fairchild semi
 fqd17n08l fqu17n08l.pdf

December 2000 TM QFET QFET QFET QFET FQD17N08L / FQU17N08L 80V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 12.9A, 80V, RDS(on) = 0.1 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 8.8 nC) planar stripe, DMOS technology. Low Crss ( typical 29 pF) This advanced