All MOSFET. FQU17P06 Datasheet

 

FQU17P06 MOSFET. Datasheet pdf. Equivalent

Type Designator: FQU17P06

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 44 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 25 V

Maximum Drain Current |Id|: 12 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.135 Ohm

Package: TO251_IPAK

FQU17P06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQU17P06 Datasheet (PDF)

1.1. fqd17p06 fqu17p06.pdf Size:721K _fairchild_semi

FQU17P06
FQU17P06

January 2009 QFET® FQD17P06 / FQU17P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect • -12A, -60V, RDS(on) = 0.135? @VGS = -10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 21 nC) planar stripe, DMOS technology. • Low Crss ( typical 80 pF) This advanced technology has been especially tailored t

5.1. fqd17n08l fqu17n08l.pdf Size:555K _fairchild_semi

FQU17P06
FQU17P06

December 2000 TM QFET QFET QFET QFET FQD17N08L / FQU17N08L 80V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 12.9A, 80V, RDS(on) = 0.1? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 8.8 nC) planar stripe, DMOS technology. • Low Crss ( typical 29 pF) This advanced technology is

Datasheet: FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , FQU13N10L , FDB86102LZ , IRFZ46N , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 , FQU2N90TU_AM002 , FQU3N50C .

Back to Top

 


FQU17P06
  FQU17P06
  FQU17P06
 

social 

LIST

Last Update

MOSFET: IRFP7718PBF | IRFP7537PBF | IRFP7530PBF | IRFP7430PBF | IRFP4868PBF | IRFP4768PBF | IRFP4710PBF | IRFP4668PBF | IRFP462 | IRFP460PBF | IRFP460P | IRFP460NPBF | IRFP460N | IRFP460LCPBF | IRFP460C |