FQU17P06 MOSFET. Datasheet pdf. Equivalent
Type Designator: FQU17P06
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 44 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 25 V
Maximum Drain Current |Id|: 12 A
Maximum Junction Temperature (Tj): 150 °C
Maximum Drain-Source On-State Resistance (Rds): 0.135 Ohm
Package: TO251_IPAK
FQU17P06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FQU17P06 Datasheet (PDF)
1.1. fqd17p06 fqu17p06.pdf 
Size:721K _fairchild_semi
January 2009 QFET® FQD17P06 / FQU17P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect • -12A, -60V, RDS(on) = 0.135? @VGS = -10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 21 nC) planar stripe, DMOS technology. • Low Crss ( typical 80 pF) This advanced technology has been especially tailored t
1.2. fqu17p06tu.pdf Size:804K _fairchild_semi
January 2009 QFET® FQD17P06 / FQU17P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect • -12A, -60V, RDS(on) = 0.135Ω @VGS = -10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 21 nC) planar stripe, DMOS technology. • Low Crss ( typical 80 pF) This advanced technology has been especia
5.1. fqd17n08l fqu17n08l.pdf Size:555K _fairchild_semi
December 2000 TM QFET QFET QFET QFET FQD17N08L / FQU17N08L 80V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 12.9A, 80V, RDS(on) = 0.1? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 8.8 nC) planar stripe, DMOS technology. • Low Crss ( typical 29 pF) This advanced technology is
Datasheet: FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , FQU13N10L , FDB86102LZ , IRFZ46N , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 , FQU2N90TU_AM002 , FQU3N50C .
