FQU17P06 Datasheet and Replacement. Cross Reference Search

FQU17P06 Datasheet (PDF)

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January 2009QFETFQD17P06 / FQU17P0660V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -12A, -60V, RDS(on) = 0.135 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 21 nC)planar stripe, DMOS technology. Low Crss ( typical 80 pF)This advanced technology has been especia

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FQU17P06www.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % UIS Tested0.066 at VGS = - 10 V - 20APPLICATIONS- 60 40 nC at VGS = - 4.5 V - 180.080 Load SwitchTO-251SGDP-Channel MOSFETG D STop ViewABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted)Par

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December 2000TMQFETQFETQFETQFETFQD17N08L / FQU17N08L80V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 12.9A, 80V, RDS(on) = 0.1 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 8.8 nC)planar stripe, DMOS technology. Low Crss ( typical 29 pF)This advanced

Datasheet: FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , FQU13N10L , FDB86102LZ , IRFB4110 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 , FQU2N90TUAM002 , FQU3N50C .