FQU17P06 Datasheet. Specs and Replacement

Type Designator: FQU17P06  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 44 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.135 Ohm

Package: TO251 IPAK

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FQU17P06 datasheet

 ..1. Size:721K  fairchild semi
 fqd17p06 fqu17p06.pdf pdf_icon

FQU17P06

January 2009 QFET FQD17P06 / FQU17P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -12A, -60V, RDS(on) = 0.135 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 21 nC) planar stripe, DMOS technology. Low Crss ( typical 80 pF) This advanced technology has been especia... See More ⇒

 ..2. Size:2286K  cn vbsemi
 fqu17p06.pdf pdf_icon

FQU17P06

FQU17P06 www.VBsemi.tw P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) 100 % UIS Tested 0.066 at VGS = - 10 V - 20 APPLICATIONS - 60 40 nC at VGS = - 4.5 V - 18 0.080 Load Switch TO-251 S G D P-Channel MOSFET G D S Top View ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted) Par... See More ⇒

 0.1. Size:804K  fairchild semi
 fqd17p06tf fqd17p06tm fqu17p06tu.pdf pdf_icon

FQU17P06

January 2009 QFET FQD17P06 / FQU17P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -12A, -60V, RDS(on) = 0.135 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 21 nC) planar stripe, DMOS technology. Low Crss ( typical 80 pF) This advanced technology has been especia... See More ⇒

 9.1. Size:555K  fairchild semi
 fqd17n08l fqu17n08l.pdf pdf_icon

FQU17P06

December 2000 TM QFET QFET QFET QFET FQD17N08L / FQU17N08L 80V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 12.9A, 80V, RDS(on) = 0.1 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 8.8 nC) planar stripe, DMOS technology. Low Crss ( typical 29 pF) This advanced ... See More ⇒

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Detailed specifications: FQU10N20C, FDP075N15A, FQU11P06, FQU12N20, FDPF085N10A, FQU13N06L, FQU13N10L, FDB86102LZ, IRLZ44N, FQU1N60C, FDP085N10A, FQU20N06L, FQU2N100, FQU2N60C, FDMC8030, FQU2N90TUAM002, FQU3N50C

Keywords - FQU17P06 MOSFET specs

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