E50N06 Datasheet. Equivalente

 ..1. Size:1133K  cn wxdh
 50n06 f50n06 i50n06 e50n06 b50n06 d50n06.pdf

50N06/F50N06/I50N06/ E50N06/B50N06/D50N06 60A 68V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 68V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS G R = 10.5m DS(on) (TYP) standard. 1 3 S I = 60A D 2 Features Low on resistance Low ga

 ..2. Size:1691K  cn shandong baocheng elec
 e50n06 d50n06 h50n06 t50n06.pdf

50N06 60V N-Channel Power MOSFET TO-263 TO-252 Features Low FOM RDS(on) Qgd 100% avalanche tested Easy to use/drive RoHS compliant TO-251 TO-220 Drain Applications DC/DC Converter Battery Protection Charge/Discharge Gate Load Switch Synchronous Rectification Source Key Performance Parameters Parameter Value Unit VDS@ Tc=25 60 V RDS(on),

 0.1. Size:1704K  cn wxdh
 dh50n06fzc dhf50n06fzc dhi50n06fzc dhe50n06fzc dhb50n06fzc dhd50n06fzc.pdf

 0.2. Size:1310K  matsuki electric
 me50n06a me50n06a-g.pdf

ME50N06A/ME50N06A-G N- Channel 60V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME50N06A is the N-Channel logic enhancement mode power RDS(ON) 22m @VGS=10V field effect transistors are produced using high cell density DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially tailored to Exceptional on-resi

 0.3. Size:1138K  matsuki electric
 me50n06t me50n06t-g.pdf

ME50N06T/ME50N06T-G N-Channel 60-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 22m @VGS=10V The ME50N06T is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors are produced using high cell density, DMOS Exceptional on-resistance and maximum DC current trench technology. This high densit

 0.4. Size:994K  sanrise-tech
 sre50n065fsud6.pdf

Datasheet 50A 650V Trench Fieldstop IGBT with anti-parallel diode SRE50N065FSUD6 General Description Symbol The SRE50N065FSUD6 is a Field Stop Trench IGBT with anti-parallel diode, which offers ultra low switching losses, high energy efficiency for switching applications such as PFC, Power Supply, Inverter, etc. The SRE50N065FSUD6 package is TO-247. Figure 1 Symbol of SRE50N

 0.5. Size:993K  sanrise-tech
 sre50n065fsu.pdf

Datasheet 50A 650V Trench Fieldstop IGBT SRE50N065FSU General Description Symbol The SRE50N065FSU is a Field Stop Trench C IGBT, which offers ultra low switching losses, high energy efficiency for switching applications such as PFC, Power Supply, Inverter, etc. G The SRE50N065FSU package is TO-247. E Features High Breakdown Voltage to 650V Figure 1 Symbol of SRE50N065

 0.6. Size:1066K  cn vbsemi
 vbze50n06.pdf

VBZE50N06 www.VBsemi.com N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS (V) RDS(on) ( ) ID (A)a TrenchFET Power MOSFET 0.009 at VGS = 10 V 60 Material categorization 60 0.011at VGS = 4.5 V 50 D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Parameter Symbol Limit