All MOSFET. E50N06 Equivalents Search

50N06/F50N06/I50N06/ E50N06/B50N06/D50N06 60A 68V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 68V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS G R = 10.5m DS(on) (TYP) standard. 1 3 S I = 60A D 2 Features Low on resistance Low ga... See More ⇒

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ME50N06A/ME50N06A-G N- Channel 60V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME50N06A is the N-Channel logic enhancement mode power RDS(ON) 22m @VGS=10V field effect transistors are produced using high cell density DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially tailored to Exceptional on-resi... See More ⇒

ME50N06T/ME50N06T-G N-Channel 60-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 22m @VGS=10V The ME50N06T is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors are produced using high cell density, DMOS Exceptional on-resistance and maximum DC current trench technology. This high densit... See More ⇒

Datasheet 50A 650V Trench Fieldstop IGBT with anti-parallel diode SRE50N065FSUD6 General Description Symbol The SRE50N065FSUD6 is a Field Stop Trench IGBT with anti-parallel diode, which offers ultra low switching losses, high energy efficiency for switching applications such as PFC, Power Supply, Inverter, etc. The SRE50N065FSUD6 package is TO-247. Figure 1 Symbol of SRE50N... See More ⇒

Datasheet 50A 650V Trench Fieldstop IGBT SRE50N065FSU General Description Symbol The SRE50N065FSU is a Field Stop Trench C IGBT, which offers ultra low switching losses, high energy efficiency for switching applications such as PFC, Power Supply, Inverter, etc. G The SRE50N065FSU package is TO-247. E Features High Breakdown Voltage to 650V Figure 1 Symbol of SRE50N065... See More ⇒

VBZE50N06 www.VBsemi.com N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS (V) RDS(on) ( ) ID (A)a TrenchFET Power MOSFET 0.009 at VGS = 10 V 60 Material categorization 60 0.011at VGS = 4.5 V 50 D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Parameter Symbol Limit ... See More ⇒