F14N65 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

F14N6514A 650V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhanced vdmosfets, is obtained by the self-alignedVDSS = 650Vplanar technology which reduce the conduction loss, improve switchingI = 14.0ADperformance and enhance the avalanche energy. Which accords with theRoHS standard. TO-220F provides insulation voltage rated at 2000VRDS(on)TYP)

SVF14N65CFJ 14A650V N SVF14N65CFJ N MOS F-CellTM VDMOS AC-DC

SMF14N65650V N-Channnel MOSFETFeatures 14A, 650V, R =0.6@V =10VDS(on)(Typ) GS Low Gate Charge Low Crss 100% Avalanche Tested Fast Switching Improved dv/dt CapabilityApplication: High Frequency Switching Mode Power Supply Active Power Factor CorrectionAbsolute Maximum Ratings(Tc=25C unless otherwise noted)Symbol Parameter Value

MSF14N60 N-Channel Enhancement Mode Power MOSFET Description The MS14N60 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features Low On Resistance Sim