F14N65 Datasheet and Replacement
Type Designator: F14N65
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 45 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 14 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 26 nS
Cossⓘ - Output Capacitance: 160 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm
Package: TO220F
F14N65 substitution
F14N65 Datasheet (PDF)
f14n65.pdf

F14N6514A 650V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhanced vdmosfets, is obtained by the self-alignedVDSS = 650Vplanar technology which reduce the conduction loss, improve switchingI = 14.0ADperformance and enhance the avalanche energy. Which accords with theRoHS standard. TO-220F provides insulation voltage rated at 2000VRDS(on)TYP)
smf14n65.pdf

SMF14N65650V N-Channnel MOSFETFeatures 14A, 650V, R =0.6@V =10VDS(on)(Typ) GS Low Gate Charge Low Crss 100% Avalanche Tested Fast Switching Improved dv/dt CapabilityApplication: High Frequency Switching Mode Power Supply Active Power Factor CorrectionAbsolute Maximum Ratings(Tc=25C unless otherwise noted)Symbol Parameter Value
msf14n60.pdf

MSF14N60 N-Channel Enhancement Mode Power MOSFET Description The MS14N60 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features Low On Resistance Sim
Datasheet: DTG018N04N , DTG023N03L , DTG025N04NA , DTG045N04NA , DTG050P06LA , DTJ018N04N , F12N60 , F13N50 , STP65NF06 , F16N65 , F18N50 , F18N65 , F20N50 , F20N60 , F25N10 , DHS042N15 , DHS042N15E .
Keywords - F14N65 MOSFET datasheet
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