F16N65 Todos los transistores

F16N65 16A 650V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhanced vdmosfets, is obtained by the self-aligned V DSS = 650V planar technology which reduce the conduction loss, improve switching I = 16.0A D performance and enhance the avalanche energy. Which accords with the RoHS standard. TO-220F provides insulation voltage rated at 2000V R DS(on) TYP)

STF16N65M5, STI16N65M5 STP16N65M5,STU16N65M5,STW16N65M5 N-channel 650 V, 0.240 , 12 A MDmesh V Power MOSFET in TO-220FP, TO-220, IPAK, I2PAK, TO-247 Features VDSS @ RDS(on) Type ID TJmax max 3 3 3 2 2 2 1 STF16N65M5 1 1 TO-220 STI16N65M5 TO-247 TO-220FP STP16N65M5 710 V

STF16N65M5, STI16N65M5 STP16N65M5,STU16N65M5,STW16N65M5 N-channel 650 V, 0.230 , 12 A MDmesh V Power MOSFET in TO-220FP, I PAK, TO-220, IPAK, TO-247 Features TAB TAB VDSS @ RDS(on) Type ID TJmax max 3 2 3 3 2 1 1 2 STF16N65M5 1 TO-220FP TO-220 STI16N65M5 I PAK STP16N65M5 710 V

STF16N65M2 N-channel 650 V, 0.32 typ., 11 A MDmesh M2 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code VDS @ TJmax RDS(on) max ID STF16N65M2 710 V 0.36 11 A Extremely low gate charge Excellent output capacitance (Coss) profile 100% avalanche tested Zener-protected Applications TO-220FP Switching applications Figure 1.

STF16N65M5, STI16N65M5 STP16N65M5,STU16N65M5,STW16N65M5 N-channel 650 V, 0.270 , 12 A MDmesh V Power MOSFET in TO-220FP, TO-220, IPAK, I2PAK, TO-247 Features VDSS @ RDS(on) Type ID TJmax max 3 3 3 2 2 2 1 STF16N65M5 1 1 TO-220 STI16N65M5 TO-247 TO-220FP STP16N65M5 710 V

SLF16N65S 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using Msemitek s advanced 16A*, 650V, RDS(on),typ =0.42 planar stripe DMOS technology. This advanced technology Low gate charge (Qg,typ = 37nC) has been especially tailored to minimize conduction loss, pro- Fast switching vide superior switching performance, and withstand high en-

SW16N65D N-channel Enhanced mode TO-220F MOSFET Features TO-220F BVDSS 650V High ruggedness Low RDS(ON) (Typ 0.46 )@VGS=10V ID 16A Low Gate Charge (Typ 68nC) RDS(ON) 0.46 Improved dv/dt Capability 100% Avalanche Tested 2 1 Application Charger, Adaptor, LED 2 3 1 1. Gate 2. Drain 3. Source General Description 3 This power MOSFET is produce

SW16N65K N-channel Enhanced mode TO-220/TO-220F/TO-263 MOSFET Features TO-220 TO-220F TO-263 BVDSS 650V ID 16A High ruggedness Low RDS(ON) (Typ 0.23 )@VGS=10V RDS(ON) 0.23 Low Gate Charge (Typ 43nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 2 2 2 Application LED, Charge, PC Power 3 3 3 1. Gate 2. Drain 3. Source

SW16N65D N-channel Enhanced mode TO-220F MOSFET Features TO-220F BVDSS 650V High ruggedness Low RDS(ON) (Typ 0.46 )@VGS=10V ID 16A Low Gate Charge (Typ 68nC) RDS(ON) 0.46 Improved dv/dt Capability 100% Avalanche Tested 2 1 Application Charger, Adaptor, LED 2 3 1 1. Gate 2. Drain 3. Source General Description 3 This power MOSFET is produce

SW16N65K N-channel Enhanced mode TO-220/TO-220F/TO-263 MOSFET Features TO-220 TO-220F TO-263 BVDSS 650V ID 16A High ruggedness Low RDS(ON) (Typ 0.23 )@VGS=10V RDS(ON) 0.23 Low Gate Charge (Typ 43nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 2 2 2 Application LED, Charger, PC Power 3 3 3 1. Gate 2. Drain 3. Source

TSF16N65MR 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemi s 16A,650V,Max.RDS(on)=0.52 @ =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to VGS minimize on-state resistance, provide superior switching Low gate charge(typical 50nC) performance, and withstand high e

SMF16N65 650V N-Channnel MOSFET Features 16A, 650V, R =0.5 @V =10V DS(on)(Typ) GS Low Gate Charge Low C rss 100% Avalanche Tested Fast Switching Improved dv/dt Capability Application High Frequency Switching Mode Power Supply Active Power Factor Correction Absolute Maximum Ratings(Tc=25 C unless otherwise noted) Symbol Parameter Value

JMPF16N65BJ Description JMP N-channel Enhancement Mode Power MOSFET Features Applications 650V, 16A Load Switch RDS(ON)

SMIRF16N65 30V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFET Description ID 16A SMIRF12N65 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 650V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 0.6 (VGS=10V, ID=8A) on-state resistance, provide superior