F16N65 datasheet, подбор замены

 ..1. Size:1299K  cn wxdh
 f16n65.pdf 

F16N65 16A 650V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhanced vdmosfets, is obtained by the self-aligned V DSS = 650V planar technology which reduce the conduction loss, improve switching I = 16.0A D performance and enhance the avalanche energy. Which accords with the RoHS standard. TO-220F provides insulation voltage rated at 2000V R DS(on) TYP)

 0.1. Size:1053K  st
 stp16n65m5 stu16n65m5 stw16n65m5 sti16n65m5 stf16n65m5.pdf 

STF16N65M5, STI16N65M5 STP16N65M5,STU16N65M5,STW16N65M5 N-channel 650 V, 0.240 , 12 A MDmesh V Power MOSFET in TO-220FP, TO-220, IPAK, I2PAK, TO-247 Features VDSS @ RDS(on) Type ID TJmax max 3 3 3 2 2 2 1 STF16N65M5 1 1 TO-220 STI16N65M5 TO-247 TO-220FP STP16N65M5 710 V

 0.2. Size:1099K  st
 stf16n65m5 sti16n65m5 stp16n65m5 stu16n65m5 stw16n65m5.pdf 

STF16N65M5, STI16N65M5 STP16N65M5,STU16N65M5,STW16N65M5 N-channel 650 V, 0.230 , 12 A MDmesh V Power MOSFET in TO-220FP, I PAK, TO-220, IPAK, TO-247 Features TAB TAB VDSS @ RDS(on) Type ID TJmax max 3 2 3 3 2 1 1 2 STF16N65M5 1 TO-220FP TO-220 STI16N65M5 I PAK STP16N65M5 710 V

 0.3. Size:780K  st
 stf16n65m2.pdf 

STF16N65M2 N-channel 650 V, 0.32 typ., 11 A MDmesh M2 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code VDS @ TJmax RDS(on) max ID STF16N65M2 710 V 0.36 11 A Extremely low gate charge Excellent output capacitance (Coss) profile 100% avalanche tested Zener-protected Applications TO-220FP Switching applications Figure 1.

 0.4. Size:994K  st
 stp16n65m5 stu16n65m5 stw16n65m5 sti16n65m5 stf16n65m5 2.pdf 

STF16N65M5, STI16N65M5 STP16N65M5,STU16N65M5,STW16N65M5 N-channel 650 V, 0.270 , 12 A MDmesh V Power MOSFET in TO-220FP, TO-220, IPAK, I2PAK, TO-247 Features VDSS @ RDS(on) Type ID TJmax max 3 3 3 2 2 2 1 STF16N65M5 1 1 TO-220 STI16N65M5 TO-247 TO-220FP STP16N65M5 710 V

 0.5. Size:2141K  maple semi
 slf16n65s.pdf 

SLF16N65S 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using Msemitek s advanced 16A*, 650V, RDS(on),typ =0.42 planar stripe DMOS technology. This advanced technology Low gate charge (Qg,typ = 37nC) has been especially tailored to minimize conduction loss, pro- Fast switching vide superior switching performance, and withstand high en-

 0.6. Size:820K  samwin
 sw16n65d swf16n65d.pdf 

SW16N65D N-channel Enhanced mode TO-220F MOSFET Features TO-220F BVDSS 650V High ruggedness Low RDS(ON) (Typ 0.46 )@VGS=10V ID 16A Low Gate Charge (Typ 68nC) RDS(ON) 0.46 Improved dv/dt Capability 100% Avalanche Tested 2 1 Application Charger, Adaptor, LED 2 3 1 1. Gate 2. Drain 3. Source General Description 3 This power MOSFET is produce

 0.7. Size:1213K  samwin
 sw16n65k swp16n65k swf16n65k swb16n65k.pdf 

SW16N65K N-channel Enhanced mode TO-220/TO-220F/TO-263 MOSFET Features TO-220 TO-220F TO-263 BVDSS 650V ID 16A High ruggedness Low RDS(ON) (Typ 0.23 )@VGS=10V RDS(ON) 0.23 Low Gate Charge (Typ 43nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 2 2 2 Application LED, Charge, PC Power 3 3 3 1. Gate 2. Drain 3. Source

 0.8. Size:820K  samwin
 swf16n65d.pdf 

SW16N65D N-channel Enhanced mode TO-220F MOSFET Features TO-220F BVDSS 650V High ruggedness Low RDS(ON) (Typ 0.46 )@VGS=10V ID 16A Low Gate Charge (Typ 68nC) RDS(ON) 0.46 Improved dv/dt Capability 100% Avalanche Tested 2 1 Application Charger, Adaptor, LED 2 3 1 1. Gate 2. Drain 3. Source General Description 3 This power MOSFET is produce

 0.9. Size:1143K  samwin
 swp16n65k swf16n65k swb16n65k.pdf 

SW16N65K N-channel Enhanced mode TO-220/TO-220F/TO-263 MOSFET Features TO-220 TO-220F TO-263 BVDSS 650V ID 16A High ruggedness Low RDS(ON) (Typ 0.23 )@VGS=10V RDS(ON) 0.23 Low Gate Charge (Typ 43nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 2 2 2 Application LED, Charger, PC Power 3 3 3 1. Gate 2. Drain 3. Source

 0.10. Size:777K  truesemi
 tsf16n65mr.pdf 

TSF16N65MR 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemi s 16A,650V,Max.RDS(on)=0.52 @ =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to VGS minimize on-state resistance, provide superior switching Low gate charge(typical 50nC) performance, and withstand high e

 0.11. Size:521K  huake
 smf16n65.pdf 

SMF16N65 650V N-Channnel MOSFET Features 16A, 650V, R =0.5 @V =10V DS(on)(Typ) GS Low Gate Charge Low C rss 100% Avalanche Tested Fast Switching Improved dv/dt Capability Application High Frequency Switching Mode Power Supply Active Power Factor Correction Absolute Maximum Ratings(Tc=25 C unless otherwise noted) Symbol Parameter Value

 0.12. Size:381K  jiejie micro
 jmpf16n65bj.pdf 

JMPF16N65BJ Description JMP N-channel Enhancement Mode Power MOSFET Features Applications 650V, 16A Load Switch RDS(ON)

 0.13. Size:1604K  cn sps
 smirf16n65.pdf 

SMIRF16N65 30V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFET Description ID 16A SMIRF12N65 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 650V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 0.6 (VGS=10V, ID=8A) on-state resistance, provide superior