F20N50 Datasheet. Equivalente

 ..1. Size:1374K  cn wxdh
 f20n50.pdf

F20N50 20A 500V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhanced vdmosfets, is obtained by the self-aligned V DSS = 500V planar technology which reduce the conduction loss, improve switching I = 20.0A D performance and enhance the avalanche energy. Which accords with the RoHS standard. TO-220F provides insulation voltage rated at 2000V R DS(on) TYP)

 ..2. Size:1298K  cn wxdh
 20n50 f20n50 i20n50 e20n50.pdf

20N50/F20N50/ I20N50/E20N50 20A 500V N-channel Enhancement Mode Power MOSFET 1 Description These silicon N-channel enhanced vdmosfets, is obtained 2 D V = 500V DSS by the self-aligned planar technology which reduce the conduction loss, improve switching performance and R = 0.24 DS(on) (TYP) G enhance the avalanche energy. Which accords with the 1 RoHS standard. I = 20A 3 S D

 0.1. Size:838K  fairchild semi
 fdp20n50f fdpf20n50ft.pdf

October 2007 UniFETTM FDP20N50F / FDPF20N50FT tm N-Channel MOSFET, FRFET 500V, 20A, 0.26 Features RDS(on) = 0.22 ( Typ.)@ VGS = 10V, ID = 10A Description Low gate charge ( Typ. 50nC) These N-Channel enhancement mode power field effect transis- Low Crss ( Typ. 27pF) tors are produced using Fairchild s proprietary, planar stripe, DMOS technology. Fast reve

 0.2. Size:469K  fairchild semi
 fdp20n50 fdpf20n50.pdf

April 2007 TM UniFET FDP20N50 / FDPF20N50 500V N-Channel MOSFET Features Description 20A, 500V, RDS(on) = 0.23 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 45.6 nC) stripe, DMOS technology. Low Crss ( typical 27 pF) This advanced technology has been especially

 0.3. Size:665K  fairchild semi
 fdp20n50 fdpf20n50 fdpf20n50t.pdf

November 2013 FDP20N50 / FDPF20N50 / FDPF20N50T N-Channel UniFETTM MOSFET 500 V, 20 A, 230 m Features Description UniFETTM MOSFET is Fairchild Semiconductor s high voltage RDS(on) = 200 m (Typ.) @ VGS = 10 V, ID = 10 A MOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 45.6 nC) This MOSFET is tailored to reduce on-state resistance, and to

 0.4. Size:494K  onsemi
 fdp20n50f fdpf20n50ft.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 0.5. Size:772K  onsemi
 fdp20n50 fdpf20n50 fdpf20n50t.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 0.6. Size:463K  silikron
 ssf20n50uh.pdf

SSF20N50UH Main Product Characteristics VDSS 500V RDS(on) 0.2 (typ.) ID 20A Marking and Pi n TO-247 Schematic Diagram Assignment Features and Benefits Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery Descri

 0.7. Size:781K  blue-rocket-elect
 brf20n50.pdf

BRF20N50(BRCS20N50FL) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220FL N MOS N-CHANNEL MOSFET in a TO-220FL Plastic Package. / Features Low gate charge Low Crss Fast switching. / Applications DC/DC These devices a

 0.8. Size:346K  silan
 svf20n50f svf20n50pn.pdf

SVF20N50F/PN 20A 500V N 2 SVF20N50F/PN N MOS F-CellTM VDMOS 1 3

 0.9. Size:843K  bruckewell
 msf20n50.pdf

MSF20N50 N-Channel Enhancement Mode Power MOSFET Description The MSF20N50 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features Low On Resistance S

 0.10. Size:612K  feihonltd
 fhp20n50a fhf20n50a.pdf

 0.11. Size:1295K  maple semi
 slp20n50c slf20n50c.pdf

SLP20N50C / SLF20N50C 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 20A, 500V, RDS(on)typ. = 220m @VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge ( typical 74.5nC) This advanced technology has been especially tailored - High ruggedness to minimize on-state resistance, provide superior switching - Fast switchi

 0.12. Size:803K  samwin
 swf20n50d swt20n50d.pdf

SW20N50D N-channel Enhanced mode TO-220F/TO-247 MOSFET Features TO-220F TO-247 BVDSS 500V ID 20A High ruggedness Low RDS(ON) (Typ 0.19 )@VGS=10V RDS(ON) 0.19 Low Gate Charge (Typ 82nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 2 2 Application Charger, Adaptor, LED 3 3 1 1. Gate 2. Drain 3. Source 3 General De

 0.13. Size:409K  trinnotech
 tmp20n50 tmpf20n50.pdf

TMP20N50/TMPF20N50 TMP20N50G/TMPF20N50G VDSS = 550 V @Tjmax Features ID = 18A Low gate charge RDS(on) = 0.3 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark TMP20N50 / TMPF20N50 TO-220 / TO-220F TMP20N50 / TMPF20N50 RoHS TMP20N50

 0.14. Size:621K  trinnotech
 tmp20n50a tmpf20n50a.pdf

TMP20N50A(G)/TMPF20N50A(G) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 500V 18A

 0.15. Size:802K  truesemi
 tsf20n50m.pdf

TSF20N50M 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemi s 20A,500V,Max.RDS(on)=0.28 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 70nC) minimize on-state resistance, provide superior switching High ruggedness performance, and withstan

 0.16. Size:4735K  haolin elec
 hf20n50 hp20n50.pdf

HF20N50,HP20N50 500V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Absolute Maximum Ratings TC = 25 unless otherwise noted C, Parameter Symbol Value Unit Drain-Source Voltage (VGS = 0V) VDSS 500 V Continu

 0.17. Size:795K  cn minos
 mpf20n50.pdf

Silicon N-Channel Power MOSFET Description MPF20N50, the silicon N-channel Enhanced MOSFETS, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for Synchronous Rectification, inverter systems ,high speed switching and general purpose applications. KEY CHARACTERISTIC