F25N10 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Principales características: F25N10

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25n10 f25n10 i25n10 e25n10 b25n10 d25n10.pdf pdf_icon

25N10/F25N10/I25N10/ E25N10/B25N10/D25N10 25A 100V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel Enhanced VDMOSFETs Used V = 100V DSS advanced trench technology design, provided excellent RDSON and low gate charge. Which accords with the R = 30m DS(on) TYP) RoHS standard. I = 25A D 2 Features Fast Switching Low ON Resistance(Rdson 36m )

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std25n10f7 stf25n10f7 stp25n10f7.pdf pdf_icon

STD25N10F7, STF25N10F7, STP25N10F7 N-channel 100 V, 0.027 typ., 25 A, STripFET VII DeepGATE Power MOSFET in DPAK, TO-220FP and TO-220 packages Datasheet - production data Features TAB RDS(on) Order codes VDSS ID PTOT max.(1) DPAK STD25N10F7 100 V 0.035 25 A 40 W STF25N10F7 100 V 0.035 19 A 25 W TAB STP25N10F7 100 V 0.035 25 A 50 W 1. @ VGS = 10 V 3 3

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kgf25n120kda.pdf pdf_icon

SEMICONDUCTOR KGF25N120KDA TECHNICAL DATA General Description KEC Field Stop Trench IGBTs offer low switching losses, high energy efficiency and short circuit ruggedness. It is designed for applications such as motor control, uninterrupted power supplies(UPS), general inverters. FEATURES High speed switching High ruggedness, temperature stable behavior Short Circuit Withstand

Otros transistores... F12N60 , F13N50 , F14N65 , F16N65 , F18N50 , F18N65 , F20N50 , F20N60 , K2611 , DHS042N15 , DHS042N15E , DHS042N85P , DHS043N07P , DHS043N85P , DHS044N12 , DHS044N12E , DHS044N12U .