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F25N10 Spec and Replacement


   Type Designator: F25N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 61 nC
   tr ⓘ - Rise Time: 26 nS
   Cossⓘ - Output Capacitance: 107 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm
   Package: TO220F

 F25N10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

F25N10 Specs

 ..1. Size:1238K  cn wxdh
25n10 f25n10 i25n10 e25n10 b25n10 d25n10.pdf pdf_icon

F25N10

25N10/F25N10/I25N10/ E25N10/B25N10/D25N10 25A 100V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel Enhanced VDMOSFETs Used V = 100V DSS advanced trench technology design, provided excellent RDSON and low gate charge. Which accords with the R = 30m DS(on) TYP) RoHS standard. I = 25A D 2 Features Fast Switching Low ON Resistance(Rdson 36m ) ... See More ⇒

 0.1. Size:1281K  st
std25n10f7 stf25n10f7 stp25n10f7.pdf pdf_icon

F25N10

STD25N10F7, STF25N10F7, STP25N10F7 N-channel 100 V, 0.027 typ., 25 A, STripFET VII DeepGATE Power MOSFET in DPAK, TO-220FP and TO-220 packages Datasheet - production data Features TAB RDS(on) Order codes VDSS ID PTOT max.(1) DPAK STD25N10F7 100 V 0.035 25 A 40 W STF25N10F7 100 V 0.035 19 A 25 W TAB STP25N10F7 100 V 0.035 25 A 50 W 1. @ VGS = 10 V 3 3 ... See More ⇒

 9.1. Size:1565K  kec
kgf25n120kda.pdf pdf_icon

F25N10

SEMICONDUCTOR KGF25N120KDA TECHNICAL DATA General Description KEC Field Stop Trench IGBTs offer low switching losses, high energy efficiency and short circuit ruggedness. It is designed for applications such as motor control, uninterrupted power supplies(UPS), general inverters. FEATURES High speed switching High ruggedness, temperature stable behavior Short Circuit Withstand ... See More ⇒

Detailed specifications: F12N60 , F13N50 , F14N65 , F16N65 , F18N50 , F18N65 , F20N50 , F20N60 , K2611 , DHS042N15 , DHS042N15E , DHS042N85P , DHS043N07P , DHS043N85P , DHS044N12 , DHS044N12E , DHS044N12U .

History: F20N50 | TN0104N8 | IXFX66N50Q2 | H5N2503P

Keywords - F25N10 MOSFET specs

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